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A high voltage Schottky diode

A Schottky diode and Schottky contact technology, which is applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve the problems of low reverse bias voltage, large reverse leakage current, etc., to reduce leakage current, The effect of increasing the breakdown voltage and increasing the concentration

Active Publication Date: 2018-06-26
CHENGDU 90 DEGREE IND PROD DESIGN CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The biggest disadvantage of Schottky diodes is their low reverse bias voltage and large reverse leakage current. For Schottky diodes made of silicon and metal, their reverse bias rated withstand voltage is only up to 50V. , while the reverse leakage current value has a positive temperature characteristic, which tends to increase sharply with the increase of temperature

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  • A high voltage Schottky diode

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Embodiment Construction

[0035] All features disclosed in this specification, or steps in all methods or processes disclosed, may be combined in any manner, except for mutually exclusive features and / or steps.

[0036] Any feature disclosed in this specification (including any appended claims, abstract), unless otherwise stated, may be replaced by alternative features that are equivalent or serve a similar purpose. That is, unless expressly stated otherwise, each feature is one example only of a series of equivalent or similar features.

[0037] Such as figure 1 , the high-voltage Schottky diode of the present invention includes a substrate, an epitaxial layer, a metal contact layer and a protective layer; an epitaxial layer is epitaxially grown on the upper surface of the substrate; a plurality of grooves are formed at intervals in the epitaxial layer; the The metal contact layer is arranged on the upper surface of the epitaxial layer; an ohmic contact metal is arranged at both ends of the metal co...

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Abstract

The invention discloses a high voltage schottky diode, which is characterized by comprising a substrate, an epitaxial layer, a metal contact layer and a protective layer. The upper surface of the substrate is provided with an epitaxial layer through epitaxial growth; a plurality of grooves are arranged in the epitaxial layer at intervals; the metal contact layer is arranged on the upper surface of the epitaxial layer; two ends of the metal contact layer are provided with ohmic contact metal; the schottky contact metal is arranged in the center part of the metal contact layer; an active layer is positioned between the ohmic contact metal and the schottky contact metal; the upper surface of the schottky contact metal is provided with a protective layer; the ohmic contact is the cathode of the high voltage schottky diode; and the schottky contact is the anode of the high voltage schottky diode. The high voltage schottky diode can improve the reverse bias voltage, and reduces the reverse leakage current.

Description

technical field [0001] The invention relates to a schottky diode, in particular to a schottky diode capable of providing high voltage and a preparation method of the high voltage schottky diode. Background technique [0002] Schottky diode, also known as Schottky barrier diode (SBD for short), is a low-power, ultra-high-speed semiconductor device. The most notable feature is that the reverse recovery time is extremely short (can be as small as a few nanoseconds), and the forward voltage drop is only about 0.4V. It is mostly used as high-frequency, low-voltage, high-current rectifier diodes, freewheeling diodes, and protection diodes. It is also useful as rectifier diodes and small-signal detector diodes in microwave communication circuits. It is more common in communication power supplies, frequency converters, etc. [0003] A Schottky diode is a metal-semiconductor device made of a noble metal (gold, silver, aluminum, platinum, etc.) A as the positive electrode and an N-t...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/872H01L29/45H01L29/47H01L21/329
CPCH01L29/45H01L29/47H01L29/66143H01L29/8725
Inventor 卢晔
Owner CHENGDU 90 DEGREE IND PROD DESIGN CO LTD