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TFT and manufacturing method thereof

A technology of thin-film transistors and manufacturing methods, which is applied in semiconductor/solid-state device manufacturing, electric solid-state devices, semiconductor devices, etc., can solve the problems of affecting the aperture ratio of pixel units, affecting the display effect, and reducing the display effect, so as to improve the display effect, Process saving and cost reduction effect

Active Publication Date: 2016-03-02
WUHAN CHINA STAR OPTOELECTRONICS TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, setting the light-shielding pattern not only requires etching the light-shielding layer for patterning in the photomask process, but also requires an alignment operation between the light-shielding pattern and the subsequent channel. The polysilicon pattern makes the production process complicated, and the existence of the light-shielding pattern will also affect the aperture ratio of the pixel unit, thereby reducing the display effect
[0004] In summary, the light-shielding pattern set in the prior art not only complicates the manufacturing process of the thin film transistor but also affects the display effect

Method used

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  • TFT and manufacturing method thereof
  • TFT and manufacturing method thereof
  • TFT and manufacturing method thereof

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Embodiment Construction

[0020] see figure 1 with figure 2 , figure 1 It is a schematic flowchart of an embodiment of a manufacturing method of a thin film transistor provided by the present invention; figure 2 yes figure 1 Schematic diagram of the process corresponding to each step. combine figure 1 with figure 2 As shown, the manufacturing method includes the following steps:

[0021] S1: providing a substrate 11 .

[0022] Wherein, the substrate 11 may be a glass substrate or a plastic substrate. Further, while providing the substrate 11 , the substrate 11 is cleaned or sanded to remove impurities on the surface of the substrate 11 , and the substrate 11 is optionally dried through a drying process to provide a clean substrate 11 .

[0023] S2: forming the first buffer layer 12 on the substrate 11 .

[0024] Wherein, the first buffer layer 12 may be formed by deposition or coating, such as using physical vapor deposition (PVD), chemical vapor deposition (CVD) equipment or a coating mach...

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PUM

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Abstract

The invention discloses a TFT and a manufacturing method thereof. The method comprises the steps of: providing a substrate; forming a first buffer layer on the substrate, and forming a light shield layer on the first buffer layer; forming a second buffer layer on the light shield layer; forming a poly silicon layer on the second buffer layer; and etching the poly silicon layer, the second buffer layer and the light shield layer through a first photomask process to from a light shield pattern, a buffer pattern and a poly silicon pattern once. Compared with the prior art, the method can reduce manufacturing processes so as to reduce costs, furthermore make the width of the light shield pattern same with the width of the poly silicon pattern, and improve display effects.

Description

technical field [0001] The invention relates to the field of display technology, in particular to a thin film transistor and a manufacturing method thereof. Background technique [0002] Among small-size, high-resolution displays, low-temperature polysilicon (LowTemperaturePoly-Silicon, LTPS) liquid crystal displays have been widely used due to their high mobility, stable performance, space saving, and reduced cost of driving circuits. [0003] In the prior art, there are many thin-film transistor (TFT) layer structures in the pixel unit of the LTPS liquid crystal display, and the fabrication is very complicated. For example, a light-shielding pattern needs to be provided in a thin film transistor, and the width of the light-shielding pattern needs to be greater than the width of the channel (polysilicon pattern) in the thin film transistor, so as to ensure that the channel is less affected by the light source, so that the circuit is stable. However, setting the light-shiel...

Claims

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Application Information

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IPC IPC(8): H01L21/77H01L27/12
CPCH01L27/1259H01L27/1262
Inventor 卢改平赵瑜陈辰
Owner WUHAN CHINA STAR OPTOELECTRONICS TECH CO LTD
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