IGBT (Insulated Gate Bipolar Transistor) hybrid radiator
A heat sink and cooling plate technology, which is applied in the direction of electric solid devices, semiconductor devices, semiconductor/solid device components, etc., can solve the problems of poor reliability and poor heat dissipation effect of transistors, and achieve enhanced pressure resistance and uniform heat transfer Thorough, easy-to-use effect
Active Publication Date: 2016-03-09
WUXI FANGSHENG HEAT EXCHANGER MFG
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Problems solved by technology
[0003] The heat sink in the prior art has poor heat dissipation effect on transistors and poor reliability in use
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[0014] The specific implementation manner of the present invention will be described below in conjunction with the accompanying drawings.
[0015] like figure 1 and figure 2 As shown, the IGBT hybrid heat sink of this embodiment includes a cooling plate 8 with a cuboid structure, the cooling plate 8 is separated from a medium outlet 1 and a medium inlet 2, and an outflow guide groove 4 is opened at a position opposite to the medium outlet 1. The relative position of the medium inlet 2 is provided with an inflow guide groove 3; a plurality of vertical square grooves 5 are opened in communication with the outflow guide groove 4 and the inflow guide groove 3, and cooling fins 10 are installed in the square grooves 5.
[0016] There are eight square grooves 5 spaced apart on the cooling plate 8, and the first communication groove 6, the second communication groove 7 and the third communication groove 9 are also opened on the cooling plate 8; the first square groove of the coolin...
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The present invention discloses an IGBT (Insulated Gate Bipolar Transistor) hybrid radiator. The IGBT hybrid radiator comprises a rectangular cooling plate, wherein a medium outlet and a medium inlet are alternately formed on the cooling plate, an outflow guide groove is formed at a position relative to the medium outlet, and an inflow guide groove is formed at a position relative to the medium inlet; and multiple square grooves in the vertical direction are formed communicating with the outflow guide groove and the inflow guide groove, and cooling fins are arranged in the square grooves; medium inlet and outlet interfaces are arranged on an inner cavity cooling plate, the guide grooves for inflow and outflow of a cooling medium are formed at relative positions, and the square grooves communicating with the fluid inlet and outlet guide grooves are formed in the vertical direction; and meanwhile, the cooling fins are placed in a few of the square grooves, so that the flow velocity of the medium in a corresponding flow passage is reduced, the local heat exchange area is increased, and heat exchange can be implemented more uniformly and completely, and meanwhile, the pressure resistance of a water cooling plate is enhanced by increasing from the original conventional withstand pressure of 0.3 MPa to 0.8 MPa. The use reliability is greatly improved, and the heat dissipation effect is good.
Description
technical field [0001] The invention relates to the technical field of radiators, in particular to an IGBT hybrid radiator. Background technique [0002] IGBT (Insulated Gate Bipolar Transistor) is a composite fully-controlled voltage-driven power semiconductor device composed of BJT (Bipolar Transistor) and MOS (Insulated Gate Field Effect Transistor), with high input impedance and GTR of MOSFET The advantages of low conduction voltage drop, not only small driving power, but also low saturation voltage, are very suitable for AC systems with a DC voltage of 600V and above, such as AC motors, frequency converters, switching power supplies, lighting circuits, traction drives, etc. field. Under today's increasingly severe environmental problems and energy consumption pressure, low-carbon economy is becoming the development consensus of all countries in the world, and IGBT plays an indispensable role in energy conservation and emission reduction, new energy, high-speed rail, sm...
Claims
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IPC IPC(8): H01L23/367H01L23/473
CPCH01L23/3672H01L23/473
Inventor 张卫锋徐伟斌丁丽海
Owner WUXI FANGSHENG HEAT EXCHANGER MFG