Y203: Bi, Yb thin film preparation method having anti-reflection and down-conversion light conversion functions at the same time
A technology of thin film preparation and light conversion, applied in chemical instruments and methods, photovoltaic power generation, luminescent materials, etc., to achieve the effects of improving photoelectric conversion efficiency, simple preparation method and stable structure
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Embodiment 1
[0033] (1) Primary corrosion: alkali corrodes the surface of the silicon wafer
[0034] NaOH / IPA(isopropanol) / H 2 Corrosion was carried out in a mixed solution of O for 40 min, in which the mass fraction of NaOH was 2.5 wt%, and IPA was added at a mass ratio of 1:7. During the corrosion process, the temperature of the water bath was controlled to T=80°C. After the reaction, the silicon wafer was first rinsed with deionized water, then with absolute ethanol and then dried.
[0035] (2) DC sputtering Ni
[0036] Put the alkali-etched silicon wafer into the sputtering chamber, and enter Ar gas, the substrate temperature is room temperature, and the working pressure is 9Pa, then start sputtering the Ni layer, and the sputtering time is 9min.
[0037] (3) Secondary corrosion: Ni assisted corrosion of silicon wafers
[0038] Preparation H 2 o 2 / HF / H 2O mixed etching solution, the volume ratio was 1:2:10, the silicon wafer with Ni sputtered on the surface was etched in the pre...
Embodiment 2
[0044] Sputtering time is adjusted to 5min in the step (2), all the other conditions are consistent with embodiment 1, the SEM figure of gained silicon substrate is as follows figure 1 Shown in (b), the obtained film XRD pattern is as follows Figure 6 As shown, its SEM is as image 3 As shown in (b), its reflectance comparison with the silicon wafer is as follows Figure 4 As shown, its emission spectrum under the excitation of 331nm wavelength is as Figure 5 shown.
Embodiment 3
[0046] Sputtering time is adjusted to 7min in the step (2), all the other conditions are consistent with embodiment 1, gained silicon substrate SEM picture is as follows figure 1 As shown in (c), the SEM of the obtained thin film is as follows image 3 As shown in (c), its reflectance comparison with the silicon wafer is as follows Figure 4 As shown, its emission spectrum under the excitation of 331nm wavelength is as Figure 5 shown.
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