Welding method for target assembly

A welding method and target material technology, applied in welding equipment, metal processing equipment, manufacturing tools, etc., can solve problems such as poor deposition effect, interrupted deposition process, abnormal deposition equipment, etc., to increase roughness, increase energy, The effect of increasing the contact area

Active Publication Date: 2016-03-30
KONFOONG MATERIALS INTERNATIONAL CO LTD
View PDF5 Cites 23 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the welding between the target and the back plate of the existing target assembly is still not ideal, which causes the target assembly to be prone to abnorm

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Welding method for target assembly
  • Welding method for target assembly
  • Welding method for target assembly

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0044] In the prior art, the welding quality of the target and the back plate is not ideal. Taking the ultra-high-purity titanium target as an example, it is difficult to weld the target of this material, and it is difficult for the solder to infiltrate the surface of the target. The welding quality of the back plate is not high, which easily leads to abnormalities in the process of welding the target, resulting in the failure of the target component to be used normally, or the problem that the quality of the film formed by sputtering deposition is not high. In addition, since there may be an oxide layer between the target and the back plate, the oxide layer can easily affect the welding quality between the target and the back plate.

[0045] To this end, the present invention provides a welding method for a target assembly, which is used to weld the target and the back plate to form a target assembly. Refer to figure 1 , the welding method comprises the following steps:

[0...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention provides a welding method for a target assembly. The welding method is used for welding a target and a back plate to form the target assembly. The method includes the steps that the back plate and the target are provided; molten solder is arranged on a welding face of the back plate; a steel brush is used for wetting the welding face of the back plate and the molten solder, and ultrasonic waves are used for processing the welding face of the back plate and the molten solder; the steel brush is used for processing a welding face of the target; and the welding face of the target and the welding face of the back plate are attached so as to weld the target and the back plate. The welding method has the beneficial effects that the contact area between the molten solder and the welding face of the back plate is enlarged, atoms of the solder can be conveniently and more quickly dispersed onto the welding face of the back plate, and therefore the molten solder can conveniently wet the surface of the welding face of the back plate, and the welding quality of the target and the back plate is higher.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a welding method for target components. Background technique [0002] Sputter coating is a common process in semiconductor manufacturing. The target component is the material source of the sputtering coating. The target component is composed of a target that meets the sputtering performance and a back plate with a certain strength. To the role of fixed support, and has the effect of heat conduction. In the sputtering coating process, the quality of the target components has an important influence on the performance of the sputtered film. [0003] Due to the harsh environment of the sputtering process, the target component is in a strong electric field and a strong magnetic field during the sputtering process, and is bombarded by various high-speed particles, and the temperature of the target component is also high. Therefore, higher Weld strength target components. ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): B23K1/06B23K1/20
Inventor 姚力军相原俊夫大岩一彦潘杰王学泽吴庆勇
Owner KONFOONG MATERIALS INTERNATIONAL CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap