Method for making silicon micro-nano structure array based on ultrasonic standing wave field

Abstract

The invention discloses a method for making a silicon micro-nano structure array based on an ultrasonic standing wave field. The method comprises the following steps: (1) preparing corrosive liquid, wherein the corrosive liquid is prepared from an HF solution, an H<2>O<2> solution and an AgNO<3> solution which are mixed uniformly; (2) putting the corrosive liquid obtained in the step (1) into a reaction kettle, putting the reaction kettle into the ultrasonic standing wave field formed by an ultrasonic generator, and starting an ultrasonic power supply to form the ultrasonic standing wave field; and (3) putting cleaned monocrystalline silicon wafers into the reaction kettle, and corroding the monocrystalline silicon wafers for 30-60 minutes to obtain a monocrystalline silicon micro-nano structure array. Through adoption of the method, the ultrasonic standing wave field is combined with a conventional metal-assisted chemical corrosion method, so that metal catalyst particles are accumulated on ultrasonic standing wave points under the action of acoustic radiation force of the ultrasonic standing wave field in a reaction process; the metal catalyst particles are distributed on a monocrystalline silicon surface in a linear array form; and a regular micro-nano structure array is formed on the monocrystalline silicon surface along with the proceeding of a corrosive reaction.

Description

technical field [0001] The invention belongs to the technical field of micro-nano processing, and in particular relates to a method for preparing a silicon micro-nano structure array based on an ultrasonic standing wave field. Background technique [0002] As an important semiconductor material, silicon is widely used in sensors, solar cells, MEMS and other fields, and plays a very important role. At present, the methods for preparing micro-nano structures on single crystal silicon mainly include vapor-liquid-solid (VLS) method, reactive ion etching method, spot chemical etching method and metal-assisted chemical etching method. Among them, the metal-assisted chemical etching method is cost-effective, the processing method is simple and easy, the preparation of micro-nano structures is easy to control, and the processing quality is high. Therefore, it is widely used at present. However, the metal-assisted chemical etching method is random, and the preparation of regular mi...

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Problems solved by technology

However, the metal-assisted chemical etching method is random, and the preparation of regular micro-nano structures is complicated and cost-effective.

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