Manufacturing method for molybdenum disulfide field-effect transistor
A technology of molybdenum disulfide field and production method, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve problems such as high cost and non-recyclable use, and achieve the effect of reducing production costs
Active Publication Date: 2016-03-30
SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI +1
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Problems solved by technology
[0004] In view of the above-mentioned shortcoming of prior art, the object of the present invention is to provide a kind of manufacturing method of molybdenum disulfide field effect transistor, is used to solve the high cost in the prior art, the problem that can not be recycled, realizes prior art and CMOS at the same time Compatible technologies can effectively reduce the complexity of the manufacturing process
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[0049] Embodiments of the present invention are described below through specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific implementation modes, and various modifications or changes can be made to the details in this specification based on different viewpoints and applications without departing from the spirit of the present invention.
[0050] Please refer to the attached Figure 1 to Figure 8 . It should be noted that the diagrams provided in this embodiment are only schematically illustrating the basic idea of the present invention, and only the components related to the present invention are shown in the diagrams rather than the number, shape and shape of the components in actual implementation. Dimensional drawing, the type, quantity and proportion of each com...
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Abstract
The invention provides a manufacturing method for a molybdenum disulfide field-effect transistor. The manufacturing method includes the following steps of: firstly, providing a substrate including a doped silicon substrate and a top insulating layer, and etching the top insulting layer to form metal electrode landfill windows; secondly, depositing a metal film above the top insulating layer and the metal electrode landfill windows; thirdly, removing the metal film above the top insulating layer by adoption of a thinning method to obtain a metal source electrode and a metal drain electrode; fourthly, keeping the remained metal film above the metal electrode windows and the top insulating layer being at the same horizontal height; fifthly, manufacturing a passivation layer above the metal source electrode, the metal drain electrode and the top insulating layer, and manufacturing external circuit windows and a molybdenum disulfide window; and finally transferring molybdenum disulfide to the molybdenum disulfide window, and allowing the molybdenum disulfide to be connected to the metal source electrode and the metal drain electrode. The manufacturing method is simple in process and is compatible with a CMOS process, so that the manufacturing method has excellent expansibility and a device manufactured through the manufacturing method can be repeatedly used, and the manufacturing method has a wide use prospect in the fields of micro-electronics and biochemical detection.
Description
technical field [0001] The invention belongs to the technical field of preparation and application of micro-nano devices, and relates to a method for manufacturing an electrical detection device of a nanometer film material, in particular to a method for manufacturing a molybdenum disulfide field effect tube. Background technique [0002] At present, most common molybdenum disulfide field effect transistors are realized by electron beam lithography and lift-off process. Because the area of molybdenum disulfide is small, after the molybdenum disulfide obtained by the lift-off method is transferred to the surface of silicon oxide, after the position is determined by microscope observation, the electrical connection between the molybdenum disulfide and the outside world is realized by electron beam lithography and lift-off process. The single-layer molybdenum disulfide field effect transistor produced by B. Radisavljevic et al. in "Single-layer MoS2transistors", Nature Nanote...
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Inventor 李铁袁志山陈云飞王跃林倪中华易红
Owner SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI