Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Preparation method of single-layer closely-arranged nano-microsphere arrays

A nano-microsphere and close-packed technology, which is applied in nanostructure manufacturing, nanotechnology, nanotechnology, etc., can solve the problems of high price and easy damage to the template layer close-packed structure by motors, and achieve low cost, simple structure, and high liquid level. small perturbation effect

Active Publication Date: 2016-04-13
XIAMEN UNIV +1
View PDF6 Cites 6 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In addition to being expensive, the disturbance of the motor during lifting can easily destroy the close-packed structure of the template layer

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparation method of single-layer closely-arranged nano-microsphere arrays
  • Preparation method of single-layer closely-arranged nano-microsphere arrays
  • Preparation method of single-layer closely-arranged nano-microsphere arrays

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0035] 1) Silicon wafer cleaning: put the 10mm×15mm Si(100) substrate in deionized water for 10 minutes, ultrasonic cleaning in toluene for 10 minutes, ultrasonic cleaning in deionized water for 5 minutes, ultrasonic cleaning in acetone for 10 minutes, and then in deionized water for 10 minutes. Ultrasonic cleaning in water for 5 min, ultrasonic cleaning in ethanol for 10 min, and ultrasonic cleaning in deionized water for 5 min; prepare a solution of sulfuric acid (97%) and hydrogen peroxide (30%) with a volume ratio of 3:1, place the silicon chip in the solution and heat it at 80 Ultrasonic at ℃ for 2h, then take out and ultrasonically clean in deionized water for 3 times, each time for 5min; The wafer was placed in the solution and ultrasonicated at 80°C for 2 hours, then ultrasonically cleaned in deionized water for 10 minutes; then the silicon wafer was soaked in SDS (tetrahydrofuran, 10% concentration) solution for 12 hours to increase hydrophilicity. Take it out and ult...

Embodiment 2

[0047] 1) Cleaning of glass slides: put the slides of 10mm×15mm in deionized water for 10 minutes, ultrasonic cleaning in toluene for 10 minutes, ultrasonic cleaning in deionized water for 10 minutes, ultrasonic cleaning in acetone for 10 minutes, and ultrasonic cleaning in deionized water for 10 minutes. , sonicated in ethanol for 10 min, and ultrasonically cleaned in deionized water for 10 min. Then place the slide in SDS (10% concentration) solution and soak for 12 hours to increase the hydrophilicity. Take it out and ultrasonically clean it in deionized water 3 times, 5 min each time. The working power of the above ultrasonic machine is 100W, and the frequency is 40kHz.

[0048] 2) Placement of the first substrate 10: place the cleaned glass slide on the first substrate holder 7 folded with copper wires, and then fix the first substrate holder 7 to the edge of the funnel mouth, so that the glass slide faces upwards, About 1 / 3 of the front surface is immersed in deionized...

Embodiment 3

[0060] 1) Cleaning of glass slides: put the slides of 10mm×15mm in deionized water for 10 minutes, ultrasonic cleaning in toluene for 10 minutes, ultrasonic cleaning in deionized water for 10 minutes, ultrasonic cleaning in acetone for 10 minutes, and ultrasonic cleaning in deionized water for 10 minutes. , sonicated in ethanol for 10 min, and ultrasonically cleaned in deionized water for 10 min. Then place the slide in SDS (10% concentration) solution and soak for 12 hours to increase the hydrophilicity. Take it out and ultrasonically clean it in deionized water 3 times, 5 min each time. The working power of the above ultrasonic machine is 100W, and the frequency is 40kHz.

[0061] 2) Placement of the first substrate 10: place the cleaned glass slide on the first substrate holder 7 folded with copper wires, and then fix the first substrate holder 7 to the edge of the funnel mouth, so that the glass slide faces upwards, About 1 / 3 of the front surface is immersed in deionized...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to nano-microspheres, in particular to a preparation method of single-layer closely-arranged nano-microsphere arrays. The method includes the steps that substrates are placed in a built single-layer closely-arranged nano-microsphere array preparation device at certain positions and in certain directions, nano-microspheres are densely arranged on the water surface in a single layer through the buoyancy of water and the action of a surfactant, a second substrate clamp support loaded with the nano-microsphere arrays to be arranged is slowly and horizontally moved, the second substrate is placed under a water surface single-layer closely-arranged nano-microsphere area, then the water is slowly drained to transfer the nano-microsphere arrays to the surface of the second substrate, and annealing is performed to closely arrange the nano-microsphere arrays on the second substrate. The device is low in cost, simple in structure and easy and convenient to operate and hardly causes liquid surface fluctuation. Besides the two-dimensional structure characteristic application, the formed nano-microsphere arrays can also be used for preparing large-area two-dimensional nano-spherical-shell arrays, two-dimensional nano-particle arrays and two-dimensional heterojunction nano-thin-layer arrays with finer structures as nano-microsphere templates and are suitable for the fields of nano-science, nano-processing engineering and the like.

Description

technical field [0001] The invention relates to nanometer microspheres, in particular to a method for preparing a single-layer close-packed nanometer microsphere array. Background technique [0002] Nanoparticles can be widely used in many fields such as catalysis, degradation, sensing, medical treatment, luminescence, information storage and transmission due to their volume effect, surface effect, quantum size effect and quantum tunneling effect which are completely different from bulk materials (reference 1 :NieZ,PetukhovaA,EugeniaK,Propertiesandemergingapplicationsofself-assembledstructuresmadefrominorganicnanoparticles[J].NatureNanotechnology,2010,5:15-25;2:PetrosRAandDesimoneJM,Strategiesinthedesignofnanoparticlesfortherapeuticapplications[J].NatureReviewsDrugDiscovery2010,9,615-627)。 However, the function of a single nanoparticle is very limited, and the signal itself is very weak. In the application, the overall effect of multiple particles is usually adopted. Corresp...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): B82B3/00
CPCB82B3/0009
Inventor 黄胜利余彬彬赵瑞胜李定国刘璟李书平康俊勇
Owner XIAMEN UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products