Infrared light-emitting diode with strain harmony multi-quantum well structure

A multi-quantum well structure and infrared light-emitting technology, applied in the field of infrared light-emitting diodes, can solve problems such as difficulty in making monochromatic multi-quantum well structures and the like

Active Publication Date: 2016-04-13
TIANJIN SANAN OPTOELECTRONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In the early days, liquid phase epitaxy (LPE) was used to grow double heterostructure light-emitting diodes using AlGaAs as the active la

Method used

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  • Infrared light-emitting diode with strain harmony multi-quantum well structure
  • Infrared light-emitting diode with strain harmony multi-quantum well structure

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0026] The contact layer is a P-type contact layer Al heavily doped with C X Ga 1-X As, where X is 35% and the concentration is 8E18 atoms / cm.

[0027] The P-type first cladding layer is a C-doped P-type first cladding layer Al X Ga 1-X As, wherein X is 15%, and the concentration is 8E17 atoms / cm; the P-type second cladding layer is a C-doped P-type second cladding layer Al X Ga 1-X As, where X is 35% and the concentration is 1E18 atoms / cm.

[0028] The N-type second cladding layer is an N-type second cladding layer Al doped with Si X Ga 1-X As, wherein X is 35%, and the concentration is 1E18 atoms / cm; the N-type first cladding layer is an N-type first cladding layer Al doped with Si X Ga 1-X As, where X is 15%, and the concentration is 6E17 atoms / cm.

[0029] The buffer layer is a buffer layer composed of GaAs, and the concentration is 1.5E18 atoms / cm.

[0030] The GaAs substrate is a single crystal N-type GaAs substrate doped with Si, and the concentration is 1.2E1...

Embodiment 2

[0035] The contact layer is a P-type contact layer Al heavily doped with C X Ga 1-X As, where X is 35% and the concentration is 8E18 atoms / cm.

[0036] The P-type first cladding layer is a C-doped P-type first cladding layer Al X Ga 1-X As, wherein X is 15%, and the concentration is 8E17 atoms / cm; the P-type second cladding layer is a C-doped P-type second cladding layer Al X Ga 1-X As, where X is 35% and the concentration is 1E18 atoms / cm.

[0037] The N-type second cladding layer is an N-type second cladding layer Al doped with Si X Ga 1-X As, wherein X is 35%, and the concentration is 1E18 atoms / cm; the N-type first cladding layer is an N-type first cladding layer Al doped with SiX Ga 1-X As, where X is 15%, and the concentration is 6E17 atoms / cm.

[0038] The buffer layer is a buffer layer composed of GaAs, and the concentration is 1.5E18 atoms / cm.

[0039] The GaAs substrate is a single crystal N-type GaAs substrate doped with Si, and the concentration is 1.2E18 ...

Embodiment 3

[0043] The contact layer is a P-type contact layer Al heavily doped with C X Ga 1-X As, where X is 35% and the concentration is 8E18 atoms / cm.

[0044] The P-type first cladding layer is a C-doped P-type first cladding layer Al X Ga 1-X As, wherein X is 15%, and the concentration is 8E17 atoms / cm; the P-type second cladding layer is a C-doped P-type second cladding layer Al X Ga 1-X As, where X is 35% and the concentration is 1E18 atoms / cm.

[0045] The N-type second cladding layer is an N-type second cladding layer Al doped with Si X Ga 1-X As, wherein X is 35%, and the concentration is 1E18 atoms / cm; the N-type first cladding layer is an N-type first cladding layer Al doped with Si X Ga 1-X As, where X is 15%, and the concentration is 6E17 atoms / cm.

[0046] The buffer layer is a buffer layer composed of GaAs, and the concentration is 1.5E18 atoms / cm.

[0047] The GaAs substrate is a single crystal N-type GaAs substrate doped with Si, and the concentration is 1.2E1...

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Abstract

The invention provides an infrared light-emitting diode with a strain harmony multi-quantum well structure. A quantum well layer comprises a well layer with (In<X>Ga<1-X>)As or (Al<X1>Ga<1-X1>)<Y1>In<1-Y1>As and a barrier layer with (Al<X1>Ga<1-X1>)As<X2>P<1-X2> or (Al<X1>Ga<1-X1>)<Y2>In<1-Y2>P, wherein X, X1, X2, Y1 and Y2 are smaller than 1 and greater than 0; and the number of quantum well pairs is 3 to 25. After quantum well strain harmony is utilized, crystal lattices are matched with a substrate, so that crystal lattice dislocation can be effectively improved; the dislocation defect is suppressed; the improved structure has a relatively good light output; and the voltage value is relatively low.

Description

technical field [0001] The invention belongs to the field of light-emitting diodes, in particular to an infrared light-emitting diode with a strain-adjusted multiple quantum well structure. Background technique [0002] Infrared light-emitting diodes are mainly used in infrared communication, infrared remote control devices, light sources for sensors and night lighting. Early use of liquid phase epitaxy (LPE) to grow double-heterostructure light-emitting diodes using AlGaAs as the active layer, it is difficult to create a multi-quantum well structure with excellent monochromaticity and a light emission wavelength of 900 nm or more. SUMMARY OF THE INVENTION [0003] In view of this, the present invention aims to provide a multi-quantum well structure infrared light emitting diode with strain adjustment, so as to form an infrared light emitting diode with high efficiency and excellent monochromaticity, and the emission peak wavelength is above 900 nm. [0004] In order to a...

Claims

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Application Information

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IPC IPC(8): H01L33/06H01L33/12H01L33/30H01L33/00
CPCH01L33/0062H01L33/06H01L33/12H01L33/30
Inventor 吴超瑜吴俊毅黄俊凯王笃祥
Owner TIANJIN SANAN OPTOELECTRONICS
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