Perovskite solar cell transparent conductive substrate, preparation method and solar cell
A technology for solar cells and transparent conduction, applied in the field of solar cells, can solve the problem that the electrical conductivity and light transmittance of the transparent conductive layer cannot be taken into account, and achieve the effects of improving the filling factor, reducing the absorption, and having a wide range of applications.
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Embodiment 1
[0030] The perovskite solar cell transparent conductive substrate of the present invention comprises a glass layer 1-1, a high light transmittance TCO layer 1-3 and a high conductance TCO layer 1-4 from top to bottom, wherein the high light transmittance TCO Layer 1-3 is a thin film with uniform thickness, the thickness is 20 to 300nm, and the light transmittance is ≥ 85%. The high-conductivity TCO layer 1-4 is a layer of network structure composed of interlaced interconnecting lines 1-4a , the thickness of each interconnection line 1-4a is 100 to 500 nm, the width is 10 to 200 μm, and the resistivity is ≤6e-4??cm. In this embodiment, the resistivity of the high-transmittance TCO layer 1-3 is 1e-3?cm, the thickness is 100nm, and the light transmittance is 90%; the resistivity of the high-conductivity TCO layer 1-4 is 4e-4? cm, the thickness is 200nm, the interconnection line 1-4a includes the latitude line in the horizontal direction and the warp line in the vertical direction...
Embodiment 2
[0033] Such as figure 1 As shown, the difference between the present embodiment and the embodiment 1 is that: a SiO2 layer 1-2 with a thickness of 200 nm is further included between the glass layer 1-1 and the high light-transmitting TCO layer 1-3. TCO chooses FTO.
Embodiment 3
[0035] The difference between this embodiment and embodiment 2 is that AZO is selected as the TCO, and the resistivity of the high light transmittance TCO layer 1-3 is 8e-4?cm, the thickness is 50nm, and the light transmittance 85%; The resistivity of the high-conductivity TCO layer 1-4 is 2e-4?? cm, and the thickness is 300nm. The interconnection line 1-4a includes a horizontal latitude line and a vertical warp line, and the warp line and the weft line are interlaced. Each interconnection line The width is 100 μm, the thickness is 300 nm, and the distance between two adjacent warp or weft lines is 300 μm.
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Abstract
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