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A kind of rotating silicon-magnesium alloy target material and preparation method thereof

A silicon-magnesium alloy and target technology, which is applied in metal material coating process, ion implantation plating, coating and other directions, can solve the problem of no public preparation method for preparing a rotating silicon-magnesium alloy target, and improve the contact stress. , high safety performance, good uniformity effect

Active Publication Date: 2018-08-17
FUJIAN ACETRON NEW MATERIALS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, none of the above-mentioned prior art discloses the preparation of the rotating silicon-magnesium alloy target involved in the present invention and its preparation method.

Method used

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Experimental program
Comparison scheme
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Embodiment Construction

[0032] A rotating silicon-magnesium alloy target material, the purity is greater than 99.9%, the magnesium content is respectively 30wt%, 40wt%, and 50wt%, and the rest of silicon.

[0033] A method for preparing silicon-magnesium mixed powder for a rotating silicon-magnesium alloy target, the process is as follows:

[0034] (1) Premixing: premixing silicon powder and magnesium powder in a three-dimensional mixer;

[0035] (2) configure the slurry: mix the premix in the alcohol solution in a ratio of 70% to make a slurry, and mix with 0.5% dispersant by weight;

[0036] (3) Dispersion: place the above-mentioned slurry in an ultrasonic machine, use ultrasonic waves to disperse it, and carry out manual stirring at the same time;

[0037] (4) adding the slurry prepared in step (3) into a spray granulator to prepare D50 silicon magnesium powder at 80-100 μm;

[0038] (5) Calcining the granulated material obtained in step (4) in a vacuum sintering furnace.

[0039] Wherein, the ...

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Abstract

The invention relates to a rotating silicon-magnesium alloy target; the purity is higher than 99.9%; the magnesium content is respectively 30 wt%, 40 wt% or 50 wt%; and the silicon is remained. The invention further discloses a method for preparing the rotating silicon-magnesium alloy target; and the method comprises the following steps: pretreatment: a stainless steel back pipe is pretreated, such as cleaning and sand blasting roughening; spraying of a bonding layer: the arc spraying is used for spraying a nickel-aluminum alloy coating layer with a thickness of 0.2-0.5 mm on the stainless steel back pipe, and the coating layer achieves an effect of connecting the stainless steel back pipe with a subsequently sprayed target material; and plasma spraying deposition of a silicon-magnesium coating layer: plasma spraying equipment is used for melting, spraying and depositing prepared silicon-magnesium powder on the stainless steel back pipe to form the silicon-magnesium coating layer. The target is high in safety and excellent in uniformity.

Description

technical field [0001] The invention relates to a rotating silicon-magnesium alloy target and a preparation method thereof, belonging to the field of new materials. Background technique [0002] Due to the unique physical and optical properties of silicon-based thin films, they are widely used in many fields such as modern solar cells, liquid crystal displays, ion displays, flat touch screens, optics and architectural glass. At present, the most widely used in the market is pure silicon target filled with gas reactive sputtering film formation. However, as we all know, the technical development trend of target materials is closely related to the development trend of thin film technology in downstream application industries. As the application industry develops in thin film products or As technology improves on components, target technology changes accordingly. However, after sputtering with a pure silicon target to form a film, due to poor friction resistance and poor chemi...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/34C22C23/00C22C28/00C23C4/131C23C4/08C23C4/134C23C4/06
CPCC22C23/00C22C28/00C23C4/06C23C4/08C23C14/3407C23C14/3414
Inventor 陈钦忠张科林志河
Owner FUJIAN ACETRON NEW MATERIALS CO LTD