Preparation method of high-quality self-support diamond thick film

A diamond thick film and diamond film technology, which is applied in metal material coating process, gaseous chemical plating, coating, etc., can solve the problems of difficult diamond thick film, easy local cracks, and increased phase content, so as to avoid Partial or penetrating cracks, good quality consistency

Active Publication Date: 2016-04-20
山西新碳超硬材料科技有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, due to the difference in expansion coefficient between the diamond film and the base material, when the diamond film is larger than a certain thickness (generally > 1mm), this difference will cause a large thermal stress inside the film, which will cause the film to be completely in contact with the substrate. or partial peeling, while localized cracks or penetrating cracks are prone to occur in the film
In addition, studies have shown that during the CVD process, as the deposition time increases and the film thickness increases, the grain and grain boundary sizes of the diamond film will gradually increase, and the deposition rate will continue to increase. At the same time, the SP in the film 2 The phase content will increase, w

Method used

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  • Preparation method of high-quality self-support diamond thick film
  • Preparation method of high-quality self-support diamond thick film
  • Preparation method of high-quality self-support diamond thick film

Examples

Experimental program
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Example Embodiment

[0034] Example 1:

[0035] The MPCVD equipment with a frequency of 2.45GHz was used to prepare high-quality diamond thick films with a diameter of 50mm and a thickness of 2mm.

[0036] 1) Preparation of high-quality diamond film with a diameter of 50mm and a thickness of 0.5mm: use a Si wafer with a thickness of 2mm and a diameter of 50mm as the substrate for preparing the diamond film, and grind the Si wafer with diamond powder with a particle size of 0.2μm to make it The surface is uniformly roughened to increase the density of diamond nucleation, and then it is ultrasonically cleaned with acetone solution and dried with hot air. Open the reaction chamber of the MPCVD equipment, place the cleaned Si wafer in the center of the substrate stage of the reaction chamber, close the reaction chamber and turn on the vacuum system until the vacuum of the chamber is pumped to 1×10 -2 When Pa is below Pa, pass in hydrogen with a purity of 99.9999% with a flow of 300sccm, adjust the pressure...

Example Embodiment

[0039] Example 2

[0040] The MPCVD equipment with a frequency of 2.45GHz was used to prepare a high-quality diamond thick film with a diameter of 70mm and a thickness of 3mm.

[0041] 1) Preparation of high-quality diamond film with a diameter of 70mm and a thickness of 0.6mm: Use a Si wafer with a thickness of 3mm and a diameter of 70mm as the substrate for preparing the diamond film, and grind the Si wafer with diamond powder with a particle size of 0.2μm to make it The surface is uniformly roughened to increase the density of diamond nucleation, and then it is ultrasonically cleaned with acetone solution and dried with hot air. Open the reaction chamber of the MPCVD equipment, place the cleaned Si wafer in the center of the substrate stage of the reaction chamber, close the reaction chamber and turn on the vacuum system until the vacuum of the chamber is pumped to 1×10 -2 When Pa is below Pa, pass hydrogen with a purity of 99.999% with a flow of 700sccm, adjust the pressure of ...

Example Embodiment

[0044] Example 3

[0045] A high-quality diamond thick film with a diameter of 150mm and a thickness of 3.5mm was prepared using MPCVD equipment with a frequency of 915MHz.

[0046] 1) Preparation of high-quality diamond film with a diameter of 150mm and a thickness of 0.7mm: Use a Si wafer with a thickness of 5mm and a diameter of 150mm as the substrate for preparing the diamond film, and grind the Si wafer with diamond powder with a particle size of 0.5μm to make it The surface is uniformly roughened to increase the density of diamond nucleation, and then it is ultrasonically cleaned with acetone solution and dried with hot air. Open the reaction chamber of the MPCVD equipment, place the cleaned Si wafer in the center of the substrate stage of the reaction chamber, close the reaction chamber and turn on the vacuum system until the vacuum of the chamber is pumped to 1×10 -2 When Pa is below Pa, pass hydrogen with a purity of 99.99999% with a flow rate of 2000sccm, adjust the press...

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Abstract

The invention discloses a preparation method of a high-quality self-support diamond thick film. The preparation method comprises the following steps: preparing a high-quality self-support diamond film which is 0.5 to 0.7 mm thick according to a chemical vapor deposition method; conducing grinding and polishing on a nucleation surface of the high-quality self-support diamond film, removing residual carbonide, and preparing a high-quality diamond film which is 1 to 3 mm thick on the treated nucleation surface by taking the treated nucleation surface as a base body, wherein during the two preparation processes, once the thickness of the diamond film is increased by 50 to 100 [mu]m, the methane flow rate is reduced by 0.5 to 1 percent of an initial methane flow rate. The high-quality self-support diamond thick film prepared according to the preparation method is high in quality uniformity, has no crack, and is high in mechanical strength.

Description

technical field [0001] The invention relates to a method for preparing a high-quality self-supporting diamond thick film, belonging to the technical field of superhard material preparation. Background technique [0002] The self-supporting diamond film prepared by chemical vapor deposition (CVD) can be divided into tool grade, heat sink grade, optical grade and electronic grade (or detector grade) according to the quality, among which the tool grade diamond film requires relatively high mechanical strength. Performance, its interior contains a large number of various defects, so it appears gray and black in appearance. The heat sink grade diamond film needs to have relatively high thermal conductivity, and the density of various defects contained in it is lower than that of the tool grade diamond film. Optical-grade diamond film needs to have relatively high optical transmittance, which requires fewer defects in it to ensure its excellent optical transparency in appearance ...

Claims

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Application Information

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IPC IPC(8): C23C16/27C23C16/511C23C16/52
CPCC23C16/274C23C16/52
Inventor 于盛旺王荣高洁黑鸿君张阿莉刘小萍贺志勇
Owner 山西新碳超硬材料科技有限公司
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