A kind of preparation method of array substrate
An array substrate and substrate substrate technology, which is applied in semiconductor/solid-state device manufacturing, instruments, semiconductor devices, etc., can solve the problems of ITO film residue, affecting the display characteristics of liquid crystal display panels, etc., to reduce residues and improve long-term reliability. , the effect of improving the opening rate
Active Publication Date: 2019-02-15
BOE TECH GRP CO LTD
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Problems solved by technology
[0005] The invention provides a method for preparing an array substrate, which is used to solve the problem of the ITO thin film pattern on both sides of the photoresist when etching the ITO thin film pattern under the photoresist pattern in the prior art in the process of patterning the ITO thin film. The thin film is easy to remain, which affects the display characteristics of the liquid crystal display panel
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[0039] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments It is a part of embodiments of the present invention, but not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without creative efforts fall within the protection scope of the present invention.
[0040] An embodiment of the present invention provides a method for preparing an array substrate. The step of forming an ITO thin film pattern on the base substrate includes: forming a predetermined photoresist pattern on the indium tin oxide semiconductor ITO thin film; The surface of the ITO film is treated to precipitate metal In on the surface...
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The invention discloses a preparation method of an array substrate, and relates to the technical field of displaying, in particular to a preparation method of the array substrate to solve the problems in the prior art that the displaying characteristic of a liquid crystal display panel is affected due to easy retention of ITO thin films during etching of an ITO thin film pattern in the process of patterning the ITO thin films. According to the preparation method, a step of forming an ITO thin film pattern on a substrate body comprises the following procedures: forming a predetermined photoresist pattern on an ITO thin film; treating the exposed surface of the ITO thin film by adopting a plasma treatment technology to separate out metal In from the surface of the ITO thin film; etching the ITO thin film to form an ITO pattern. Before the ITO thin film is etched, the metal In is separated out from the ITO thin film, so that the metal In etching rate is relatively high; and therefore, the etching rate of the ITO thin film can be increased, and residues arising from ITO thin film etching are reduced.
Description
technical field [0001] The invention relates to the field of display technology, in particular to a preparation method of an array substrate. Background technique [0002] Thin Film Transistor Liquid Crystal Display (TFT-LCD for short) has the characteristics of small size, low power consumption, and no radiation, and occupies a dominant position in the current flat panel display market. Advanced Super Dimension Switch (ADS for short) generates fringe electric fields through the electrodes between pixels in the same plane, so that the aligned liquid crystal molecules between the electrodes and directly above the electrodes can be rotated in the plane direction (parallel to the substrate). , improve the light transmission efficiency of the liquid crystal layer while increasing the viewing angle. [0003] ITO (Indium Tin Oxide, Indium Tin Oxide Semiconductor) thin film is an important part of liquid crystal display. In the preparation process of liquid crystal display panel, ...
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IPC IPC(8): G02F1/1343G02F1/1333H01L21/77H01L27/12
CPCG02F1/1333G02F1/134309G02F1/134318H01L27/1259
Inventor 张锋曹占锋姚琪
Owner BOE TECH GRP CO LTD