Preparation method of low-temperature polycrystalline silicon thin film and thin film transistor
A low-temperature polysilicon, polysilicon thin film technology, applied in transistors, semiconductor/solid-state device manufacturing, semiconductor devices, etc., can solve problems such as production capacity decline
Inactive Publication Date: 2016-04-20
TRULY HUIZHOU SMART DISPLAY
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Under the condition of the same laser power, only the cross-sectional area of the crystallization beam can be compressed, resulting in a decrease in productivity
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[0043] In order to make the above objects, features and advantages of the present invention more comprehensible, specific implementations of the present invention will be described in detail below in conjunction with the accompanying drawings. In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention. However, the present invention can be implemented in many other ways different from those described here, and those skilled in the art can make similar improvements without departing from the connotation of the present invention, so the present invention is not limited by the specific embodiments disclosed below.
[0044] see figure 1 , which is a flowchart of a method for preparing a low-temperature polysilicon thin film in an embodiment of the present invention.
[0045] S110, forming an amorphous silicon layer on the substrate.
[0046] For example, a plasma-enhanced chemical vapor deposition (...
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Abstract
The invention discloses a preparation method of a low-temperature polycrystalline silicon thin film. The preparation method comprises the following steps: forming an amorphous silicon layer on a substrate; depositing an antireflection film on the amorphous silicon layer, wherein the refractive index of the antireflection film is gradually reduced along with the increase of the depositing thickness, and a maximum refractive index of the antireflection film is less than that of the amorphous silicon layer; performing laser annealing on the amorphous silicon layer to convert the amorphous silicon layer into a polycrystalline silicon thin film. According to the preparation method of the low-temperature polycrystalline silicon thin film, the antireflection film is arranged on the amorphous silicon layer; the light refractive index of the antireflection film is between that of air and that of amorphous silicon; furthermore, the refractive index of the antireflection film is reduced gradually along with the increase of the depositing thickness; due to the antireflection film, a refractive index difference value between media on the two sides of the interface can be reduced, thus reflecting the interface reflection and increasing the utilization rate of light energy.
Description
technical field [0001] The invention relates to the technical field of semiconductor preparation, in particular to a method for preparing a low-temperature polysilicon thin film and a thin film transistor. Background technique [0002] Polycrystalline silicon (p-Si) thin film has a high carrier mobility much higher than that of amorphous silicon (a-Si) and comparable to that of single crystal silicon, and is often used instead of amorphous silicon in the active layer, and thus have very important applications in integrated peripheral-driven active liquid crystal displays (AMLCDs) and active organic light-emitting diodes (AMOLEDs). The substrate of the polysilicon thin film of the flat panel display is glass which is difficult to withstand the high temperature process. Under the constraints of this condition, the low temperature polysilicon (LTPS) technology is an inevitable choice for the industry. [0003] As far as the current technology is concerned, the low-temperature ...
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IPC IPC(8): H01L21/02H01L21/336H01L29/786
CPCH01L29/66409H01L29/786H01L21/02104H01L21/02518H01L21/02694
Inventor 陈卓陈建荣任思雨苏君海李建华
Owner TRULY HUIZHOU SMART DISPLAY