A silicon carbide hydrogen permeation resistance coating for stainless steel and preparation method thereof

A kind of stainless steel and silicon carbide technology, applied in coating, metal material coating process, gaseous chemical plating and other directions, can solve the problems of resistance H thinking not working, heating up and adding catalyst to accelerate and so on

Active Publication Date: 2018-01-02
北京天瑞星光热技术有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In addition, the latest research also shows that hydrogen can easily pass through two-dimensional materials such as graphene and BN, and heating up and adding catalysts can significantly accelerate this process, which means that hydrogen, as traditionally believed, cannot penetrate defect-free graphite. The H-resistance idea of ​​two-dimensional materials such as alkene is also unworkable

Method used

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  • A silicon carbide hydrogen permeation resistance coating for stainless steel and preparation method thereof

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Experimental program
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Effect test

Embodiment 1

[0043] The transition layer Ti / TiN is chosen to be plated on the substrate of austenitic stainless steel 316L, which is prepared by intermediate frequency magnetron sputtering. Firstly, metal Ti is plated, and the background vacuum is set to 1×10 -3 Pa, working pressure 0.6Pa, argon flow rate 120sccm, Ti target current 8A, voltage 550V, target base distance 80mm, time 10min, and the thickness of the obtained titanium layer is about 200nm. Deposit TiN on the basis of metal Ti, background vacuum 1×10 -3 Pa, working pressure 0.6Pa, argon flow 120sccm, nitrogen flow 15sccm, Ti target current 8A, voltage 530V, target base distance 80mm, time 20min, thickness about 350nm.

[0044] The H storage buffer layer was prepared by CVD method, and the specific parameters were as follows:

[0045] The precursor raw material is MTS, the carrier gas is H 2 (its purity is 99.8%), the diluent gas is argon, the deposition temperature is 1100°C, MTS+H 2 Flow from the first gradient 0.35L / min, th...

Embodiment 2

[0049] The transition layer Ti / TiN is chosen to be plated on the substrate of austenitic stainless steel 316L, which is prepared by intermediate frequency magnetron sputtering. Firstly, metal Ti is plated, the background vacuum is 1×10-3Pa, the working pressure is 0.3Pa, argon The flow rate is 90sccm, the Ti target current is 8A, the voltage is 560V, the target base distance is 80mm, the time is 10min, and the thickness is about 200nm. Deposit TiN on the basis of metal Ti, background vacuum 1×10-3Pa, working pressure 0.3Pa, argon flow 90sccm, nitrogen flow 15sccm, Ti target current 8A, voltage 540V, target-base distance 80mm, time 20min, thickness of 350nm.

[0050] The H storage buffer layer was prepared by PVD method, and the specific parameters were as follows:

[0051] Use pure silicon target material, first pre-evacuate to 1×10 -3 Pa; then pass into Ar and C 2 h 2 Mixed gas for intermediate frequency magnetron sputtering, Ar / C 2 h 2 The flow ratio is 5, in the proce...

Embodiment 3

[0056] Coating the transition layer Ti / TiN on the substrate of 304 stainless steel: adopt the method of intermediate frequency magnetron sputtering: firstly, metal Ti is plated, and the background vacuum is set to 1×10 -3 Pa, working pressure 0.3Pa, argon flow rate 90sccm, Ti target current 8A, voltage 560V, target base distance 80mm, time 10min, Ti layer thickness 200nm. Then on the basis of metal Ti, the TiN layer is deposited by radio frequency power magnetron sputtering: the background vacuum is 1×10 -3 Pa, working pressure 0.3Pa, argon flow rate 90sccm, nitrogen flow rate 15sccm, sputtering power 100-200W, target base distance 80mm, time 25min, TiN layer thickness 450nm.

[0057] The H storage buffer layer was prepared by PVD method, and the specific parameters were as follows:

[0058] The precursor raw material is MTS, the carrier gas is H 2 (its purity is 99.8%), the diluent gas is argon, the deposition temperature is 1150°C, MTS+H 2 The flow rate is from the first ...

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Abstract

The invention provides a silicon carbide hydrogen permeation barrier coating for stainless steel. The silicon carbide hydrogen permeation barrier coating comprises a transition layer, an H storage buffer layer and a hydrogen barrier layer which are upwards arranged layer by layer from a stainless steel substrate, wherein the transition layer is composed of a metal titanium layer and a TiN layer; the H storage buffer layer is an amorphous SixC1-x layer, wherein x is greater than or equal to 0.5, but smaller than 1, and the hydrogen barrier layer is SiC. The invention further discloses a preparation method for the silicon carbide hydrogen permeation barrier coating. According to the invention, the H storage buffer layer and the H barrier coating are combined to prepare the hydrogen permeation barrier coating with a substrate / transition layer / H storage buffer layer / SiC composite structure. Based on the radiation-resistant H barrier coating SiC film, the H storage buffer layer SixC1-x gradient layer is prepared by adopting vapor deposition technology, and the hydrogen permeation barrier property of the substrate / transition layer / H storage buffer layer / SiC composite structure is optimized by utilizing a great number of C- and Si- dangling bonds with extremely strong hydrogen catching capacity in the SixC1-x gradient layer.

Description

technical field [0001] The invention belongs to the field of plating metal materials, and in particular relates to a sputtered metal material with a hydrogen barrier layer and a preparation method thereof. Background technique [0002] In recent years, hydrogen permeation barrier coatings, also known as H barrier coatings, have been developed for various substrate materials in an attempt to prevent the permeation and leakage of hydrogen and its isotopes. A lot of research has been carried out at home and abroad, mainly to develop various hydrogen barrier composite materials and coatings. layer technology. At present, the commonly used H-barrier coatings are mainly divided into the following categories. [0003] Oxide coating: It has the advantages of high melting point, stable chemical properties, simple preparation process, and good H resistance performance. It is the earliest researched anti-hydrogen permeation coating. It can be formed by direct oxidation of the substra...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C16/32C23C14/16C23C14/06C23C28/00
CPCC23C14/0641C23C14/165C23C16/325C23C28/322C23C28/34C23C28/341
Inventor 张秀廷刘雪莲邓宁陈步亮
Owner 北京天瑞星光热技术有限公司
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