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A method of electroplating silicon -based TSV rotor board

An adapter board, silicon-based technology, applied in the manufacturing of circuits, electrical components, semiconductor/solid-state devices, etc., can solve the problem of difficult and no-hole filling, and achieve the effect of good electrical conductivity, strong flexibility, and simplified process steps

Active Publication Date: 2019-03-22
SHANGHAI JIAOTONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At the same time, TSV via filling is difficult to achieve hole-free filling

Method used

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  • A method of electroplating silicon -based TSV rotor board
  • A method of electroplating silicon -based TSV rotor board
  • A method of electroplating silicon -based TSV rotor board

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0037] In this embodiment, an insulating film is pasted on one side of the TSV wafer by hot pressing or pasting technology, pre-wetting treatment is performed before primary electroplating, and the TSV and the Pad area are filled by electroplating technology. The wafer with the TSV through hole etched can be prepared in advance, and the silicon dioxide insulating layer, titanium barrier layer and copper seed layer can be prepared by thermal oxidation, sputtering and other methods.

[0038] The concrete steps of this embodiment:

[0039] 1) Hot pressing or pasting an insulating film 4 on one side of a through-hole silicon wafer 1 with a double-sided dry film photoresist;

[0040] The through-hole silicon wafer 1 described in this embodiment can be prepared by the following method:

[0041] a. Spin-coat the silicon wafer with a positive glue of 10 μm or more or a negative glue of 10 μm or more, bake the glue with an oven or a hot plate, and perform photolithography and developm...

Embodiment 2

[0055] In this embodiment, the previous steps are the same as in Embodiment 1, except that there is no pre-wetting treatment before the first electroplating, but the pre-wetting step is placed before the second electroplating. An organic or inorganic insulating film is selected here.

[0056] 1) The well-prepared through-hole wafer with double-sided dry film photoresist is hot-pressed or pasted with an insulating film on one side;

[0057] 2) The wafer containing through holes with different apertures treated in step 1) is placed in a plating solution containing additives (accelerator SPS, inhibitor PEG and leveler JGB) in parallel with the anode on the side where the insulating film is not pasted. ;

[0058] 3) Using electroplating technology to fill the through-silicon vias TSV and Pad processed in step 2) on one side (one-time electroplating);

[0059] 4) After the Cu-Pad on the side not covered by the insulating film is formed by electroplating, remove the insulating fil...

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Abstract

The invention discloses a method for electroplating filling of a TSV adapter plate. The method comprises the following steps: (1) preparing a through hole wafer with dry film photoresists on double sides, and pasting an insulating film on a single side; (2) carrying out single-sided electroplating; (3) removing the single insulating film in the step (1); (4) enabling one side, from which the single insulating film is removed in the step (3) to correspond to an anode; (5) further filling the unfilled part; and (6) removing the photoresists and a seed layer to prepare a Cu-TSV and a Cu-Pad in flawless connection. Through the method disclosed by the invention, a TSV blind hole filling process can be transplanted into a TSV through hole electroplating filling process, so that the TSV through hole electroplating filling difficulty is greatly lowered; and the silicon-based adapter plate is filled at relatively high efficiency and relatively low cost; combination is firm; and the preparation technology is relatively flexible.

Description

technical field [0001] The invention relates to the field of microelectronic packaging, in particular to a novel step-by-step electroplating method for filling a silicon-based TSV adapter plate. Background technique [0002] TSV (Through Silicon Via, 3D-TSV) three-dimensional packaging (3D-TSV) has the characteristics of high-speed interconnection, high-density integration, miniaturization, etc., and also shows the advantages of homogeneous and heterogeneous functional integration. One of the most popular research directions. Although 3D-TSV packaging technology has many advantages, there are still some unfavorable factors restricting the development of 3D-TSV integrated packaging technology. Specifically, it includes: cumbersome and complicated preparation process, lack of design software and methods, thermomechanical problems caused by increased power density, key process and equipment problems, and system testing problems. Among them, the key process technologies involv...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/768
CPCH01L21/76838
Inventor 张亚舟孙云娜丁桂甫汪红任宇芬陈明明
Owner SHANGHAI JIAOTONG UNIV
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