Metal oxide thin film transistor with top gate structure and manufacturing method thereof

Abstract

The invention discloses a method of manufacturing a metal oxide thin film transistor with a top gate structure. The method comprises the following steps: a, a buffer layer is manufactured on a substrate; b, an opaque insulated light shielding layer and a metal oxide semiconductor layer are continuously deposited on the buffer layer, the manufactured metal oxide semiconductor layer is then patterned to serve as an active layer, the metal oxide semiconductor layer after being patterned, that is, the active layer serves as a self-aligned pattern, and the light shielding layer is patterned; c, a first insulated layer and a first metal layer are continuously deposited on the active layer, the first metal layer is then patterned to serve as a gate electrode, and then the patterned gate electrode is used to pattern the first insulated layer to serve as a gate electrode insulated layer by adopting a self-aligned method; d, a second insulated later is deposited and patterned to serve as a passivation layer; and e, second metal layers are deposited on the passivation layer and patterned to serve as source and drain electrodes. The light shielding layer is an amorphous carbon thin film or a hydrocarbon thin film or a diamond-like carbon thin film. The process is simple and the performance is excellent.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a metal oxide thin film transistor with a top gate structure and a preparation method thereof. Background technique [0002] In recent years, with the rapid development of the new flat panel display (FPD) industry, the thin film transistor (TFT) backplane technology, which is the core technology of FPD, is also undergoing profound changes. Metal Oxide Thin Film Transistor (OTFT) has gradually replaced the traditional amorphous silicon (a-Si) TFT and low temperature polysilicon (LTPS) TFT due to its advantages of high mobility, simple process, low cost, and good uniformity in large area. The new focus of the industry. [0003] However, due to the characteristics of the energy band of the amorphous metal oxide semiconductor material, it is easily affected by light with an energy greater than 2.1eV. These defects limit the use of metal oxide thin-film transistors in liquid ...

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Problems solved by technology

[0006] All of the above use the light-shielding layer to block light to avoid damage to the active layer. However, the light-shielding layer must be patterned corresponding to the position of the active layer (especially the channel area), and the area covered by the light-shielding layer must be greater than or equal to the active layer. Only the area of ​​the layer can play a role, especially the channel area, which means at least one more patterning process. The increased patterning process will lead to a complex overall process and increase the production cost.

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