Reaction chamber and semiconductor processing equipment
A reaction chamber and moving ring technology, applied in metal material coating process, ion implantation plating, coating and other directions, can solve the problems of difficult replacement of deposition ring, low utilization rate of substrates, etc., and improve the usable area , saving maintenance time, increasing productivity and economic benefits
Active Publication Date: 2016-06-01
BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
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[0008] The present invention aims to solve at least one of the technical problems in the prior art, and proposes a reaction chamber and semiconductor processing equipment, which can solve the technical problems of low substrate utilization and difficult replacement of deposition rings
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[0034] In order for those skilled in the art to better understand the technical solution of the present invention, the reaction chamber and semiconductor processing equipment provided by the present invention will be described in detail below in conjunction with the accompanying drawings.
[0035] Figure 7 A schematic structural view of the working state of the unfixed substrate in the reaction chamber provided by the embodiment of the present invention. Figure 8 for Figure 7 Partial top view of the turntable. Figure 9 for Figure 7 Enlarged view of region I in the middle. Figure 10A schematic structural view of the working state of the fixed substrate of the reaction chamber provided by the embodiment of the present invention. Figure 11 for Figure 7 with Figure 10 Schematic diagram of the structure between the pressing jaws, the moving ring and the base when no substrate is placed in . Please also refer to Figure 7-Figure 11 , the reaction chamber provided in ...
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The invention provides a reaction chamber and semiconductor processing equipment. The reaction chamber comprises a pressing ring, a rotary disc, a base and a movable ring, wherein a plurality of pressing jaws are arranged on the inner circumferential wall in the pressing ring; the inner diameter of the pressing ring is larger than the outer diameter of a substrate; a through hole is formed in the rotary disc; the pressing ring, the through hole and the base are coaxially arranged in sequence from up to down; the inner diameter of the movable ring is smaller than the outer diameter of the substrate and the outer diameter of the movable ring is larger than the inner diameter of the pressing ring; the movable ring is overlaid on the end face of the through hole, and is used for loading the substrate; the outer diameter of the base is larger than the inner diameter of the movable ring; a first annular concave part used for accommodating the movable ring is arranged on the base; the thickness of the part, loading the substrate, of the movable ring is not larger than the depth of the first annular concave part; and by virtue of the condition that the base rises in the through hole, the movable ring is jacked to the first annular concave part and lifted to a preset position, so that the pressing jaws of the pressing ring fix the substrate to the upper surface of the base. According to the reaction chamber, the technical problems that the utilization rate of the substrate is low and the changing difficulty of a deposition ring is high can be solved.
Description
technical field [0001] The invention belongs to the technical field of microelectronic processing, and in particular relates to a reaction chamber and semiconductor processing equipment. Background technique [0002] In the manufacturing process of integrated circuits, physical vapor deposition (PVD) equipment is required to complete the deposition process. During the deposition process, a base is usually required to support the substrate, vertically transport the substrate, and provide negative bias to the substrate. And control the temperature of the substrate and other functions. Since the environment of the substrate process is a vacuum environment, and the thermal conductivity of the vacuum environment is poor, therefore, in order to realize the temperature control of the substrate, it is necessary to blow a thermal medium to the back of the substrate, but this will generate back pressure on the back of the substrate. For this purpose, it is usually necessary to fix th...
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IPC IPC(8): C23C14/50
Inventor 李新颖吕峰
Owner BEIJING NAURA MICROELECTRONICS EQUIP CO LTD