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Electrical field assisted writing magnetic tunnel junction unit and writing method thereof

A magnetic tunnel junction, electric field assisted technology, applied in the field of micro-nano electronics, can solve the problems of electric field assisted writing constraints, the inability to control the magnitude of the electric field effect at the I/FL interface, etc., to enhance the electric field modulation effect and avoid the aging of the barrier layer. , the effect of reducing the difficulty of writing

Active Publication Date: 2016-06-01
HUAZHONG UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, it is impossible to effectively control the electric field effect by greatly tailoring the I / FL interface characteristics, and the electric field assisted writing will be greatly constrained.

Method used

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  • Electrical field assisted writing magnetic tunnel junction unit and writing method thereof
  • Electrical field assisted writing magnetic tunnel junction unit and writing method thereof
  • Electrical field assisted writing magnetic tunnel junction unit and writing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0043] combine figure 1 , the structure of the above-mentioned magnetic tunnel junction includes: the first electrode layer Cu on the substrate, and the first magnetic layer CoFeB, the first insulating tunneling layer MgO, the second magnetic layer CoFeB, the A metal layer Pt, a second insulating layer MgO and a second electrode layer Cu.

[0044] Wherein, the thickness of the first metal layer Pt is 0.5nm, and the electric field / voltage generated by the write pulse can greatly reduce the magnetic anisotropy of the second magnetic layer, thereby reducing the write power consumption. The substrate is a thermally oxidized Si sheet or a CMOS chip

Embodiment 2

[0046] combine figure 2 , the structure of the magnetic tunnel junction includes: the first electrode layer Cu on the substrate, and the seed layer Ta formed on the first electrode layer in sequence, the first magnetic layer CoFeB, the first insulating tunneling layer MgO, the second magnetic layer CoFeB, the first metal layer Pt, the second insulating layer MgO, the covering layer Ta and the second electrode layer Cu.

[0047] Wherein, the thickness of the first metal layer Pt is 0.5nm, and the substrate is a thermally oxidized Si sheet or a CMOS chip.

Embodiment 3

[0049] combine image 3 , the structure of the above-mentioned magnetic tunnel junction includes: the first electrode layer Cu on the substrate, and the seed layer Ta formed on the first electrode layer in turn, the third magnetic layer (Co / Pt) n (The subscript n represents a multilayer film structure), the first magnetic layer CoFeB, the first insulating tunneling layer MgO, the second magnetic layer CoFeB, the first metal layer Pt, the second insulating layer MgO, and the second electrode layer Cu .

[0050] Wherein, the thickness of the first metal layer Pt is 0.5nm; the third magnetic layer has high vertical anisotropy and is ferromagnetically coupled with the first magnetic layer; the substrate is a thermally oxidized Si sheet or a CMOS chip.

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Abstract

The invention discloses an electrical field assisted writing magnetic tunnel junction unit and a writing method thereof. The electrical field assisted magnetic tunnel junction unit is provided with a dual-barrier structure and comprises a first electrode layer and a first magnetic layer, a first insulation tunneling layer, a second magnetic layer, a first metal layer, a second insulation layer and a second electrode layer which are sequentially formed on the first electrode layer, the first magnetic layer is a reference layer RL, the first insulation layer is a tunneling layer I, the second magnetic layer is a free layer FL, the first metal layer is a non-magnetic metal layer NM, and the second insulation layer is a dielectric layer I*; when voltage is applied to the two ends of the magnetic tunnel unit, an electric field is introduced to an I / FL interface and an FL / NM interface of the two insulation layers, so that interface magnetic anisotropy of the I / FL is controlled, and the interface magnetic anisotropy of the FL / NM is controlled. Continuously-applied dual pulses are applied to the writing method, the size of the magnetic anisotropy can be reduced by means of the applied electric field during writing, thus, the writing difficulty is reduced, and the power consumption of the device is greatly reduced.

Description

technical field [0001] The invention belongs to the technical field of micro-nano electronics, and more specifically relates to an electric field-assisted writing type magnetic tunnel junction unit and a writing method thereof. Background technique [0002] Spin-torque-transfer magnetic random access memory (Spin-Torque-Transfer MRAM, STT-MRAM) has the characteristics of radiation resistance, non-volatility, fast and infinite erase and write cycles, and is a new storage technology closest to the ideal general-purpose memory. It can be used for non-volatile storage (Non-VolatileMemory, NVM) and can also be used to replace SRAM and DRAM. It is the most promising new storage technology to meet the needs of the next generation of high-performance computers. extensive attention. STT-MRAM uses the tunnel magnetoresistance effect (Tunnel Magnetoresistence, TMR) of the magnetic tunnel junction to store information, and uses the spin torque transfer effect (SpinTorqueTansfer, STT) t...

Claims

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Application Information

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IPC IPC(8): H01L27/22G11C11/15G11C11/16
CPCG11C11/15G11C11/16H10B61/00G11C11/161G11C11/1675
Inventor 程晓敏关夏威王升黄婷陆彬连晨缪向水
Owner HUAZHONG UNIV OF SCI & TECH
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