Method for optimizing thickness of baffle layer of blocking impurity band detector
A technology for blocking impurities and barrier layers, which is applied in the field of semiconductor photodetectors, can solve the problems of reducing the responsivity of detectors and sensitivity to changes in the thickness of the barrier layer, and achieve the effects of reducing research and development costs, improving device performance, and high response rate
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[0046] The present invention will be described in detail below in conjunction with specific embodiments. The following examples will help those skilled in the art to further understand the present invention, but do not limit the present invention in any form. It should be noted that those skilled in the art can make several changes and improvements without departing from the concept of the present invention. These all belong to the protection scope of the present invention.
[0047] According to the method for optimizing the thickness of the barrier layer of a barrier impurity band (BIB) detector provided by the present invention, the method obtains the rule that the responsivity of the BIB detector and the noise current spectral density vary with the thickness of the barrier layer through numerical simulation and data fitting. In order to make the detector obtain high responsivity and low noise at the same time, the quotient of the peak responsivity and the noise current spe...
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