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Method for optimizing thickness of baffle layer of blocking impurity band detector

A technology for blocking impurities and barrier layers, which is applied in the field of semiconductor photodetectors, can solve the problems of reducing the responsivity of detectors and sensitivity to changes in the thickness of the barrier layer, and achieve the effects of reducing research and development costs, improving device performance, and high response rate

Active Publication Date: 2016-06-01
NO 50 RES INST OF CHINA ELECTRONICS TECH GRP
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AI Technical Summary

Problems solved by technology

The performance of the BIB detector pursues high responsivity and low noise. The barrier layer, as a functional layer of its structure, has the function of suppressing noise, but the existence of the barrier layer will also reduce the responsivity of the detector, and the responsivity and noise affect the Sensitive to changes in barrier thickness

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  • Method for optimizing thickness of baffle layer of blocking impurity band detector
  • Method for optimizing thickness of baffle layer of blocking impurity band detector
  • Method for optimizing thickness of baffle layer of blocking impurity band detector

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Embodiment Construction

[0046] The present invention will be described in detail below in conjunction with specific embodiments. The following examples will help those skilled in the art to further understand the present invention, but do not limit the present invention in any form. It should be noted that those skilled in the art can make several changes and improvements without departing from the concept of the present invention. These all belong to the protection scope of the present invention.

[0047] According to the method for optimizing the thickness of the barrier layer of a barrier impurity band (BIB) detector provided by the present invention, the method obtains the rule that the responsivity of the BIB detector and the noise current spectral density vary with the thickness of the barrier layer through numerical simulation and data fitting. In order to make the detector obtain high responsivity and low noise at the same time, the quotient of the peak responsivity and the noise current spe...

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Abstract

The invention provides a method for optimizing thickness of a baffle layer of a blocking impurity band detector. The method comprises the following steps of acquiring optimal thickness of the baffle layer of the blocking impurity band detector. By the thickness, the detector can acquire high response rate and also has low noise, and the high-performance blocking impurity detector is designed and fabricated according to the optimized result. The method has the advantages that the corresponding optimal thickness of the baffle layer can be extracted with regard to blocking impurity band detectors obtained through different material systems and different epitaxial processes, the detector designed therefrom can have optimal value in performance, thus, repeated test piece is prevented in order to improve the device performance, and the development cost is greatly reduced.

Description

technical field [0001] The invention relates to semiconductor photodetector technology, in particular to a method for optimizing the thickness of a blocking layer of a detector blocking an impurity band. Background technique [0002] The emission spectrum of many cold targets in space is concentrated in the terahertz (THz) band, which cannot be detected by existing space-based infrared systems or ground-based radars. The space-based terahertz detection system can make up for this deficiency and greatly improve target detection. success rate. In recent years, space-based terahertz detection technology has developed rapidly, and its application fields involve atmospheric monitoring and astronomical observation. The reasons are as follows: [0003] 1) The rotation and vibration spectra of most material components in the atmosphere are located in the THz band; [0004] 2) The blackbody radiation peaks of planets, cosmic dust and newborn stars are all located in the THz spectru...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18
CPCH01L31/18Y02P70/50
Inventor 王晓东王兵兵潘鸣侯丽伟谢巍关冉臧元章汪瑞周德亮
Owner NO 50 RES INST OF CHINA ELECTRONICS TECH GRP
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