Light-emitting diode and method of making the same
A technology of light-emitting diodes and manufacturing methods, applied in the field of semiconductor optoelectronic devices, capable of solving problems such as large differences and loss of brightness
Active Publication Date: 2020-05-12
TIANJIN SANAN OPTOELECTRONICS
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Problems solved by technology
Due to the large difference between the refractive index of the semiconductor material and the air or the packaging material (such as epoxy resin), severe total reflection is caused, and the light is reflected back, and the reflected light oscillates back and forth inside the LED, and in the path of photon oscillation will be absorbed by light-absorbing substrates and quantum wells with close energy gaps, resulting in loss of brightness
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[0029] The present invention will be further described below in conjunction with the accompanying drawings and preferred specific embodiments.
[0030] see figure 1 , an epitaxial structure of a light emitting diode implemented according to the present invention, comprising: a substrate 110, a first semiconductor layer 120, an active layer 122, and a second semiconductor layer 124, wherein the upper surface of the first semiconductor layer 120 is divided into first The growth region 120a and the second growth region 120b, in which the active layer 122 is selectively grown on the surface of the first growth region 120a, have a segmented structure.
[0031] The selection of the substrate 110 includes but is not limited to sapphire, aluminum nitride, gallium nitride, silicon, and silicon carbide, and its surface structure can be a planar structure or a patterned structure. When the first semiconductor layer 120 is a p-type semiconductor, the second semiconductor layer 124 can be...
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Abstract
The invention provides a light-emitting diode and a manufacturing method thereof, which utilizes a selective growth method to form segmented quantum wells, avoids the reabsorption effect of photons in the quantum wells in the LED, and improves the external extraction efficiency and brightness. The light emitting diode includes a light emitting diode, which sequentially includes a first semiconductor layer, an active layer and a second semiconductor layer, the upper surface of the first semiconductor layer is at least divided into a first growth region and a second growth region, and the active A layer is formed only in the first growth region through selective epitaxial growth, and the second semiconductor layer covers the active layer and the second growth region of the first semiconductor layer through epitaxial growth.
Description
technical field [0001] The invention relates to the field of semiconductor optoelectronic devices, in particular to a light emitting diode and a manufacturing method thereof. Background technique [0002] A light-emitting diode (Light Emitting Diode, referred to as LED in English) is a semiconductor solid-state light-emitting device, which uses a semiconductor PN junction as a light-emitting material, and can directly convert electricity into light. With the application of LEDs more and more widely, it is imperative to further improve the luminous efficiency. [0003] The light efficiency of LED mainly depends on the internal quantum efficiency and light extraction efficiency. The former is determined by the epitaxial crystal quality of the luminescent material itself, while the latter is determined by factors such as the chip structure, the morphology of the light-emitting interface, and the refractive index of the packaging material. Due to the large difference between th...
Claims
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IPC IPC(8): H01L33/06H01L33/08H01L33/00H05B44/00
CPCH01L33/0062H01L33/06H01L33/08H01L33/12H01L33/32H01L33/405H01L33/007F21Y2115/10H01L33/26
Inventor 郭桓邵彭成基吴俊毅吴超瑜谢建元王笃祥
Owner TIANJIN SANAN OPTOELECTRONICS