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Manufacturing method of epitaxial wafer of HEMT (High Electron Mobility Transistor) and equipment for manufacturing HEMT epitaxial wafer

A manufacturing method and epitaxial wafer technology, which are applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve problems such as the decline of the crystal quality of the HMET epitaxial layer, reduce the current collapse effect and leakage current effect, and improve the crystal quality. , the effect of improving performance

Inactive Publication Date: 2016-06-08
HANGZHOU SILAN MICROELECTRONICS +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0007] One of the objectives of the present invention is to provide a method for manufacturing HEMT epitaxial wafers and equipment for preparing HEMT epitaxial wafers, so as to solve the problem of HMET epitaxy caused by the reaction of remelted Ga elements with the silicon substrate and the contamination of subsequent film layers by doping impurities. The problem of degraded layer crystal quality

Method used

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  • Manufacturing method of epitaxial wafer of HEMT (High Electron Mobility Transistor) and equipment for manufacturing HEMT epitaxial wafer
  • Manufacturing method of epitaxial wafer of HEMT (High Electron Mobility Transistor) and equipment for manufacturing HEMT epitaxial wafer
  • Manufacturing method of epitaxial wafer of HEMT (High Electron Mobility Transistor) and equipment for manufacturing HEMT epitaxial wafer

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Embodiment 1

[0048] like figure 2 As shown, a device for preparing HEMT epitaxial wafers is proposed, including m reaction chambers and n transfer chambers, where m and n are both natural numbers, and m≥3, n

[0049] In this embodiment, m=3, n=1, the three reaction chambers are the first reaction chamber 21, the second reaction chamber 22 and the third reaction chamber 23, and one transfer chamber 10 is located in the first Between the reaction chamber 21 , the second reaction chamber 22 and the third reaction chamber 23 . Wherein, the three reaction chambers are independent of each other and do not affect each other during the reaction. Specific as figure 2 As shown, the first reaction chamber 21, the second reaction chamber 22 and the third reaction chamber 23 are, for example, distributed in a zigzag shape, the transfer chamber 10 is T-shaped, and the T-shaped transfer chamber 10 is located in the middle of the zigzag shape, and T Each end of the mold is connected to a reaction ...

Embodiment 2

[0061] Please refer to Figure 11 , in this embodiment, the equipment for preparing HEMT epitaxial wafers includes four reaction chambers, which are respectively the first reaction chamber 21, the second reaction chamber 22, the third reaction chamber 23 and the fourth reaction chamber 24, Four reaction chambers share one transfer chamber 10 . Specifically, the four reaction chambers may be arranged in a quadrangle, and the transfer chamber 10 is located in the middle of the quadrangle.

[0062] In the process of preparing the HEMT epitaxial wafer, the formation of the nucleation layer 31 and the buffer layer 32 is the same as that of the first embodiment, and will not be repeated here. The difference is that, in this embodiment, after the buffer layer 32 is formed, the support substrate 30 is taken out by the robotic arm, and transported to the third reaction chamber 23 through the transfer chamber 10, in the third reaction chamber The channel layer 33 is formed in the cham...

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Abstract

The invention provides a manufacturing method of an epitaxial wafer of an HEMT (High Electron Mobility Transistor) and equipment for manufacturing the HEMT epitaxial wafer. The manufacturing method and the equipment provided by the invention have the advantages that equipment with a plurality of reaction cavities is provided, a core-forming layer is fixed in one reaction cavity for growth, a buffering layer is fixed in another cavity body for growth, and a channel layer and a barrier layer are fixed in the other reaction cavity for growth, so that volatilization and remelting of residues in the reaction cavities can be effectively prevented from influencing the quality of other thin-film layers, the quality of crystal on the HEMT epitaxial layer can be improved, and further the current collapse effect and the leakage current effect of an HEMT device are reduced.

Description

technical field [0001] The invention relates to the field of semiconductor device manufacturing, in particular to a method for manufacturing HEMT epitaxial wafers and equipment for preparing HEMT epitaxial wafers. Background technique [0002] Because HEMT (High Electron Mobility Transistor, High Electron Mobility Transistor) devices have the advantages of high breakdown characteristics, fast switching speed, and small on-resistance, they are widely used in power electronics fields such as power management, wind power generation, solar cells, and electric vehicles. application prospects. [0003] Traditional HEMTs are usually GaN-based HEMTs, and the HEMT epitaxial wafers used to prepare HEMTs usually include a sapphire substrate, a nucleation layer (usually AlN), and a buffer layer (usually doped GaN) that are sequentially formed on the sapphire substrate. , a channel layer (usually GaN) and a barrier layer (usually AlGaN), wherein, in order to make the buffer layer have b...

Claims

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Application Information

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IPC IPC(8): H01L29/778H01L21/335
CPCH01L29/778H01L29/66431
Inventor 李东昇丁海生陈善麟
Owner HANGZHOU SILAN MICROELECTRONICS