High-voltage direct-current GaN-based light emitting diode and preparation method thereof

A light-emitting diode, gallium nitride-based technology, applied in semiconductor/solid-state device manufacturing, electrical components, electric solid-state devices, etc., can solve problems such as luminous efficiency decline, reduce absorption, improve product yield, and improve light output efficiency effect

Active Publication Date: 2016-06-08
SHANGHAI JIAO TONG UNIV
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  • Abstract
  • Description
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  • Application Information

AI Technical Summary

Problems solved by technology

High-power LED chips are usually driven by high current. Due to the quantum efficiency attenuation effect (Efficiency droop effect), the luminous efficiency of high-power LEDs will decrease under high-current drive conditions.

Method used

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  • High-voltage direct-current GaN-based light emitting diode and preparation method thereof
  • High-voltage direct-current GaN-based light emitting diode and preparation method thereof
  • High-voltage direct-current GaN-based light emitting diode and preparation method thereof

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Embodiment Construction

[0049] The present invention will be described in detail below in conjunction with specific embodiments. The following examples will help those skilled in the art to further understand the present invention, but do not limit the present invention in any form. It should be noted that those skilled in the art can make several changes and improvements without departing from the concept of the present invention. These all belong to the protection scope of the present invention.

[0050] Such as figure 1As shown in FIG. 9, the high-voltage DC gallium nitride-based light-emitting diode of the present invention includes a substrate 1 and N LED unit cells 14 interconnected by metal wires 13 on the substrate. Each of the above-mentioned LED unit cells 14 is A gallium nitride buffer layer 3 , an n-type gallium nitride layer 4 , a multi-quantum well active layer 5 , and a p-type gallium nitride layer 6 are sequentially grown on the surface of the substrate 1 . The gallium nitride buff...

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Abstract

The invention provides a high-voltage direct-current GaN-based light emitting diode and a preparation method of the high-voltage direct-current GaN-based light emitting diode. The high-voltage direct-current GaN-based light emitting diode comprises a substrate and a plurality of epitaxial layers arranged on the substrate, wherein the epitaxial layer comprises a GaN buffer layer, an n-type GaN layer, a multiple quantum well active layer and a p-type GaN layer, which are sequentially arranged on the surface of the substrate, an ITO (Indium Tin Oxide) transparent conductive layer is arranged on the epitaxial layer to form an LED unit cell, and the adjacent LED unit cells are interconnected by a metal wire. Compared with the prior art, the high-voltage direct-current GaN-based light emitting diode has the beneficial effects that: the three-dimensional ITO transparent conductive layer can effectively improve the light output power, the ICP (Inductively Coupled Plasma) etching process parameter is adjusted to make the base angle of a trapezoid-shaped isolating groove to be 120-150 degrees, and the interconnected metal wire can be conformally covered onto the isolating groove, so that the overall yield is improved.

Description

technical field [0001] The invention relates to a light-emitting diode (Light-emitting diodes, LED), in particular to a design of a high-efficiency high-voltage direct-current gallium nitride-based light-emitting diode and a manufacturing method thereof. Background technique [0002] As the demand for LED brightness increases, the size of the LED chip must be increased so that it can withstand a higher input current without failure. This chip is called a high-power LED chip. High-power LED chips are usually driven by high current. Due to the quantum efficiency attenuation effect (Efficiency droop effect), the luminous efficiency of high-power LED will decrease under the condition of high current drive. Contents of the invention [0003] Aiming at the defects in the prior art, the object of the present invention is to provide a high-voltage direct current gallium nitride-based light-emitting diode and its manufacturing method that can increase the optical output power, impr...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/42H01L33/00H01L27/15H01L21/786H01L21/3065
CPCH01L21/3065H01L21/786H01L27/156H01L33/007H01L33/0075H01L33/42
Inventor 丁汉刘胜周圣军郑晨居
Owner SHANGHAI JIAO TONG UNIV
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