Laser COD eliminating method suitable for mass production

A laser and mass-volume technology, applied in the direction of lasers, laser components, semiconductor lasers, etc., can solve problems such as defects at the acceleration interface, unsuitable for industrialized mass production, and inability to significantly increase the COD optical power threshold, so as to improve the bearing capacity , Improve the effect of light output power

Inactive Publication Date: 2006-12-13
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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Problems solved by technology

Coating on the cavity surface can limit the oxidation of the cavity surface of the laser and make the output power of the laser higher than that without coating, but due to the existence of the interface state between the film layer and the laser material, non-radiative recombination will also occur. Under the power density, the release of high energy at the interface will accelerate the diffusion of defects at the interface, so the increase in the optical power threshold for COD is not

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  • Laser COD eliminating method suitable for mass production
  • Laser COD eliminating method suitable for mass production

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[0026] The specific technical process of a laser COD elimination method suitable for mass production according to specific embodiments of the present invention will be described in detail below with reference to the accompanying drawings.

[0027] The present invention is to selectively mix quantum wells on the epitaxial wafer of semiconductor material for making lasers. The actual operation is simple, and the process steps are as follows. Please refer to figure 2 :

[0028] (1) Production of solid zinc source

[0029] First, a dense silicon oxynitride layer 22 is grown on the epitaxial wafer of semiconductor material for making the laser, and the silicon oxynitride layer on the end face of the laser is etched away. The etching solution is hydrofluoric acid buffer solution. The surface has little effect. Then, a zinc oxide layer 21 is grown on the silicon oxynitride layer 22 and the electrode contact layer 16 of the semiconductor laser, and the growth temperature is 120-300...

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Abstract

The invention discloses a COD eliminating method of laser and optical non-absorbing window making technology, which is characterized by the following: diffusing zinc atom in the diffusion induced III group element or V group element of III-V group semiconductor compound through quantum confounding elementary; providing new zinc-expanding method; fitting for large-power semiconductor laser; improving optical output power obviously.

Description

technical field [0001] The invention relates to the technical field of semiconductor device manufacturing technology, in particular to a method for eliminating laser COD suitable for mass production. Background technique [0002] In late 1962, the first gallium arsenide homojunction semiconductor laser was successfully developed; in 1967, a single heterojunction laser was fabricated by liquid phase epitaxy, realizing continuous operation of semiconductor lasers at room temperature; since 1970, semiconductor lasers have obtained Development by leaps and bounds. With the development of metal-organic compound chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE) and other epitaxy technologies, ultra-thin layers of atomic size can be grown, and the structure of semiconductor lasers has been continuously improved and developed: the current commonly used laser structure is Double heterojunction quantum well laser. [0003] Due to the emergence of the double heteroju...

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Application Information

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IPC IPC(8): H01S5/34H01S5/00
Inventor 郑凯马骁宇林涛刘素平张广泽
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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