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MEMS piezoresistive pressure sensor and production method thereof

A pressure sensor, piezoresistive technology, applied in the measurement of the property force of piezoresistive materials, the measurement of fluid pressure by changing ohmic resistance, etc., can solve the problem that high sensitivity and high linearity cannot be guaranteed. problems, to achieve high reliability, improved stability, high sensitivity and linearity

Active Publication Date: 2016-06-29
PEKING UNIV
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Problems solved by technology

At present, typical micro-pressure sensors cannot obtain high linearity while obtaining high sensitivity, and in turn, cannot guarantee high sensitivity while obtaining high linearity

Method used

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  • MEMS piezoresistive pressure sensor and production method thereof
  • MEMS piezoresistive pressure sensor and production method thereof
  • MEMS piezoresistive pressure sensor and production method thereof

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preparation example Construction

[0042] The preparation method of the MEMS piezoresistive pressure sensor of this embodiment: make 4 sets along the midpoint of the square diaphragm (or circular diaphragm) made by the back cavity etching process. For the varistors arranged in crystal orientation, the number of varistors in each group can be any (generally 1-5), and the number is 4 in this embodiment; after the back cavity is etched to form the silicon strain film, the silicon A boomerang structure is etched on the front of the sheet, the varistor is located at the edge of the boomerang structure, and the varistor is located in the stress concentration area. Specifically, the steps of the method include:

[0043] 1) On the front surface of the silicon wafer, the varistor and the heavy doped contact area are made by ion implantation;

[0044] 2) Double-sided production of SiO 2 , Then make Si on both sides 3 N 4 As a back cavity etching mask, the back cavity area of ​​the silicon wafer is photoetched and the back ca...

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Abstract

The invention discloses a MEMS piezoresistive pressure sensor and a production method thereof. A silicon strain film provided with a boomerang structure is disclosed for the first time, and piezoresistors are arranged on the stress concentration part of the boomerang structure, and then the sensitivity and the linearity of the piezoresistive pressure sensor can be improved. The SiO2 / Si3N4 of the LPCVD are selected to be used as the mask of the KOH corrosion technology, and the barrier characteristic of the mask on the K+ can be improved according to the KOH back cavity corrosion technology, and therefore the high reliability of the sensor can be guaranteed. By adopting the silica glass anodic bonding technology, the glass is used for the stress buffering, and the stability of the sensor can be improved in the follow-up packaging and the follow-up tests. The MEMS piezoresistive pressure sensor is advantageous in that the higher sensitivity and the higher linearity can be provided at the same time, and the production method is compatible to the universal MEMS processing technology, and in addition, the product reliability and the product yield are high.

Description

Technical field [0001] The invention belongs to the field of microelectronic mechanical system (MEMS) sensor design, and relates to a MEMS piezoresistive pressure sensor and a method for manufacturing a silicon chip-level pressure sensor by adopting a MEMS processing method. Background technique [0002] MEMS technology is developed based on IC manufacturing technology, but there is a big difference between the two. The traditional IC processing technology is planar two-dimensional processing, and the outstanding advantage of IC is its strong ability to process electrical signals; while MEMS technology is three-dimensional processing. The outstanding advantage of MEMS is the conversion of non-electric signals to electrical signals on the chip scale. Piezoresistive pressure sensors based on MEMS technology have been widely used since the creation of MEMS. Application areas include automobiles, aerospace, biomedical and industrial control. [0003] The piezoresistive effect was disc...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01L1/18G01L9/06
CPCG01L1/18G01L9/06
Inventor 关淘淘杨芳黄贤张大成王玮姜博岩何军张立付锋善李丹李睿范泽新赵前程
Owner PEKING UNIV
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