Formation method of semiconductor structure

Abstract

The invention provides a formation method of a semiconductor structure. The formation method of a semiconductor structure comprises the steps: providing a substrate; forming an initial mask layer on the substrate; performing doping on the initial mask layer and converting the initial mask layer into a doped mask layer; forming a first graph layer with a first opening on the surface of the doped mask layer, wherein the first graph layer is a mask; using a dry etching technology to etch the doped mask layer along the first opening to form a second opening penetrating through the doped mask layer, wherein the etching rate for the doped mask layer through the dry etching technology is greater than the etching rate for the initial mask layer; and removing the first graph layer. For the formation method of a semiconductor structure, by means of the dry etching technology, the etching rate for the doped mask layer is greater than the etching rate for the initial mask layer, so that formation of an organic distribution layer is not required; the material residual problem for the organic distribution layer can be avoided; the cleanliness of the initial mask layer and the second opening can be improved; and the yield rate of the formed semiconductor composition can be improved.

Description

technical field [0001] The invention relates to the technology in the field of semiconductor manufacturing, in particular to a method for forming a semiconductor structure. Background technique [0002] Semiconductor technology continues to move towards smaller process nodes driven by Moore's Law. With the continuous advancement of semiconductor technology, the functions of devices are becoming more and more powerful, but the difficulty of semiconductor manufacturing is also increasing day by day. Photolithography technology is the most critical production technology in the semiconductor manufacturing process. With the continuous reduction of semiconductor process nodes, the existing light source lithography technology can no longer meet the needs of semiconductor manufacturing. Extreme ultraviolet lithography (EUV), Multi-beam maskless technology and nanoimprint technology have become the research hotspots of next-generation lithography candidate technologies. However, th...

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Problems solved by technology

[0005] However, in the prior art, when the layer to be etched is etched with a patterned mask layer, the quality of the pattern formed in the layer to be etched is poor, which affects the yield of the formed semiconductor structure

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