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Inorganic halogen perovskite resistive random access memory and preparation method

A technology of resistive memory and perovskite, applied in the field of microelectronics, can solve the problems of difficult control, distribution and dispersion of resistive parameters, and achieve the effect of improving performance, simple operation, good stability and fatigue resistance

Active Publication Date: 2016-06-29
NANJING UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] At present, oxide resistive materials have been extensively studied, such as ZnO x , NiO x 、TiO x etc., but since the resistive parameter in the oxide resistive memory is mainly controlled by the conduction and disconnection of the local conductive filaments randomly formed in the film, the distribution of the resistive parameter is relatively diffuse and difficult to control

Method used

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  • Inorganic halogen perovskite resistive random access memory and preparation method
  • Inorganic halogen perovskite resistive random access memory and preparation method
  • Inorganic halogen perovskite resistive random access memory and preparation method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0037] (1) Weigh 0.738gPbBr 2 and 0.4256g CsBr, dissolved in 10mL DMSO, and added 2mL oleic acid and 0.2mL oleylamine.

[0038] (2) After stirring and dissolving for 20 minutes, measure 1.5mL of the precursor solution and inject it into 50mL of toluene at 100°C. The luminescent quantum dots are formed rapidly, and the perovskite solution can be obtained after taking it out and cooling it rapidly.

[0039] (3) Mix 10mL toluene and 5mL perovskite sample solution evenly in the centrifuge tube, place the FTO conductive glass piece in the diluted perovskite solution, and centrifuge at 8000r / 3min in the centrifuge to form a gel film . The samples were annealed at 250 °C for 30 min.

[0040] (4) Coating a layer of zinc oxide film on the perovskite film by magnetron sputtering, sputtering with a sputtering power of 75W at a pressure of 2Pa for 15min, after the sputtering is over, take out the sample.

[0041] (5) The upper electrode was formed by magnetron sputtering, and the Ag ta...

Embodiment 2

[0044] (1) Weigh 0.738gPbBr 2 and 0.4256g CsBr, dissolved in 10mL DMSO, and added 2mL oleic acid and 0.2mL oleylamine.

[0045] (2) After stirring and dissolving for 20 minutes, measure 1.5mL of the precursor solution and inject it into 50mL of toluene at 100°C. The luminescent quantum dots are formed rapidly, and the perovskite solution can be obtained after taking it out and cooling it rapidly.

[0046] (3) Mix 5mL toluene and 10mL perovskite sample solution evenly in a centrifuge tube, place the FTO conductive glass piece in the diluted perovskite solution, and centrifuge at 8000r / 3min in a centrifuge to form a gel film . The samples were annealed at 250 °C for 30 min.

[0047] (4) Coating a layer of zinc oxide film on the perovskite film by magnetron sputtering, sputtering with a sputtering power of 75W at a pressure of 2Pa for 15min, after the sputtering is over, take out the sample.

[0048] (5) The upper electrode was formed by magnetron sputtering, and the Ag target...

Embodiment 3

[0051] (1) Weigh 0.738gPbBr 2 and 0.4256g CsBr, dissolved in 10mL DMSO, and added 2mL oleic acid and 0.2mL oleylamine.

[0052] (2) After stirring and dissolving for 20 minutes, measure 1.5mL of the precursor solution and inject it into 50mL of toluene at 100°C. The luminescent quantum dots are formed rapidly, and the perovskite solution can be obtained after taking it out and cooling it rapidly.

[0053] (3) Mix 10mL toluene and 5mL perovskite sample solution evenly in the centrifuge tube, place the FTO conductive glass piece in the diluted perovskite solution, and centrifuge at 8000r / 3min in the centrifuge to form a gel film . The samples were annealed at 250 °C for 30 min.

[0054] (4) Coating a layer of zinc oxide film on the perovskite film by magnetron sputtering, sputtering with a sputtering power of 75W at a pressure of 2Pa for 10min, after the sputtering is over, take out the sample.

[0055] (5) The upper electrode was formed by magnetron sputtering, and the Ag targ...

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Abstract

The invention discloses an inorganic halogen perovskite resistive random access memory and a preparation method of the inorganic halogen perovskite resistive random access memory. The memory is of a laminated structure composed of a lower electrode, a resistive layer and an upper electrode. The resistive layer comprises a zinc oxide film and a perovskite film. The preparation method of the memory comprises following steps of (A), taking a silicon wafer as a substrate, depositing to form the lower electrode FTO; (B), using a centrifugal whirl coating method to plate the perovskite film on the lower electrode FTO; (C), using a magnetron sputtering method to deposit a layer of zinc oxide film on the perovskite film; and (D) forming the upper electrode of the resistive random access memory. The memory is completely prepared by inorganic materials, is environmental protection and can circulate; the set voltage is relatively low and has excellent consistence; through changing the thickness of the perovskite film and the thickness of the zinc oxide film, the set voltage of the resistive random access memory can be adjusted; and the device has good stability and fatigue durability.

Description

technical field [0001] The invention relates to an inorganic halogen perovskite resistive variable memory and a preparation method thereof, belonging to the technical field of microelectronics. Background technique [0002] Among the many new non-volatile memories, resistive RAM (RRAM) has a simple structure, excellent size scalability, small programming current, low power consumption, high read and write speed, and is different from traditional With the advantages of good CMOS process compatibility and other advantages, it is considered to be one of the strong competitors of the next generation of non-volatile memory. Its main working principle is that a voltage pulse is applied between the two electrodes of the resistive variable memory, and its resistance value will jump from a resistance state with a higher resistance to a resistance state with a lower resistance; in this state, another voltage pulse is applied. , the resistive layer material will return to the high res...

Claims

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Application Information

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IPC IPC(8): H01L45/00H01L27/24G11C13/00
CPCG11C13/0002G11C13/0007H10B63/00H10N70/20
Inventor 曾海波李晓明吴晔韦奕
Owner NANJING UNIV OF SCI & TECH