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H bridge full-function IGBT isolation driving control module

A technology for isolating drive and control modules

Inactive Publication Date: 2016-06-29
AEROSPACE CHANGFENG CHAOYANG POWER SUPPLY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Non-isolated means that the PWM control signal and the IGBT power part share a reference ground, such as direct resistance drive, totem drive, acceleration drive, and some drives with additional protection functions. The disadvantage of this non-isolated drive method is that the IGBT power Part of it is easy to interfere with the PWM control signal
And when the IGBT power part is damaged, the PWM control signal part is mostly damaged together
Isolation means that the PWM control signal is isolated from the IGBT power part, and has its own reference ground, such as optocoupler drive, pulse transformer drive, etc. These two isolated drive methods avoid the disadvantages of non-isolated, but have their own Disadvantages: The general optocoupler does not have the corresponding protection function, and the protection function and driving ability of the existing special IGBT driven optocoupler are limited; the pulse transformer is limited by its own structure, the driving speed is limited, and if various The protection function needs to add a large number of components, the cost is high, and the reliability is low

Method used

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  • H bridge full-function IGBT isolation driving control module
  • H bridge full-function IGBT isolation driving control module
  • H bridge full-function IGBT isolation driving control module

Examples

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Embodiment Construction

[0025] The present invention will be further described below in conjunction with the accompanying drawings and embodiments.

[0026] like figure 1 It is a schematic diagram of the H-bridge circuit principle in the prior art; figure 2 Main control chip IC—ACPL337J structure diagram; image 3 Main control chip IC—ACPL337J pin diagram.

[0027] like Figure 4 and 5 As shown, an H-bridge full-function IGBT isolation drive control module includes a drive power supply, a main control chip U1, a bias network, a fault sensing network, and a drive amplification network; the input side of the drive power supply is completely isolated from the output side, and the input side voltage The 3-pin VCC1 of the main control chip U1 supplies power, and the output side voltage supplies power to the 12-pin VCC2 and 16-pin VEE2 of the main control chip U1. The fault sensing network is between the main control chip U1 and the C pole and E pole of the IGBT. The amplification network is between ...

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Abstract

The invention discloses an H bridge full-function IGBT isolation driving control module. The driving module comprises a driving power supply, a main control IC, a bias network, a fault sensing network and driving amplification network, wherein the driving power supply supplies power to the main control IC; the main control IC is an automobile-level novel full-function IGBT isolation driving optical coupler ACPL337J invented by Avago Technologies, and the main control IC comprises the multiple functions of fault sensing, Miller clamping, soft switching off, low voltage protection and the like; the bias network is used for setting the signal side of the main control IC to ensure the normal communication between the signal side of the main control IC and the system host; the fault sensing network is used for ensuring the main control IC to realize the fault sensing function; and the driving amplification network is used for accomplishing the main control IC driving power amplification. The driving control module has the complete IGBT protection functions, safe isolation design, super-strong driving capability and flexible load matching performance.

Description

technical field [0001] The invention relates to an electronic circuit, in particular to an H-bridge IGBT gate drive module for an inverter. Background technique [0002] With the development of power electronics technology and semiconductor manufacturing technology and manufacturing technology, IGBT has gradually replaced thyristors due to its superior performance, and is more and more widely used in inverters, frequency converters, EPS, UPS and various motor drives. . In these applications, most IGBTs work under the conditions of high frequency, high voltage, and high current, and are prone to damage due to problems such as short circuit, overload, overheating, and overvoltage. Designing a reliable drive circuit to reduce IGBT damage becomes the key to using IGBTs. The key is that it is related to the stability and reliability of the operation of the whole device. [0003] The driving circuit of IGBT is divided into non-isolated and isolated from the electrical structure....

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H02M1/092H02M7/5387
CPCH02M1/092H02M7/5387
Inventor 董铁鑫
Owner AEROSPACE CHANGFENG CHAOYANG POWER SUPPLY
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