A Soi MOS Tube Dose Rate Radiation SPICE Macro Model Modeling Method

Abstract

The invention relates to a SPICE (Simulation Program for Integrated Circuit Emphasis) macro model molding method for SOIMOS (Silicon on Insulator Metal Oxide Semiconductor) transistor dose rate radiation. The method mainly comprises the following steps: coupling radiation response features of a device under different conditions to an original SPICE model under a non-radiation condition of the device through a macro model technology specific to a dose rate radiation effect of an SOI MOS device in order to form a basic device unit model including radiation responses; and predicting a radiation response feature of a whole integrated circuit by direct calling of the unit model and system simulation. Through adoption of the method, functions and performance of the designed integrated circuit under specific radiation conditions can be effectively simulated; a reference basis is provided for an anti-radiation SoC (System on Chip) design; the tape-out times are reduced; the cost is lowered greatly; the development period is accelerated; and the efficiency is increased.

Description

technical field [0001] The invention designs a method for establishing a SPICE macro model of the radiation effect of a device, and in particular relates to a method for modeling a SPICE macro model of the dose rate radiation of an SOI MOS tube. Background technique [0002] The silicon on insulator (Silicon On Insulator, SOI) process refers to introducing a buried oxide layer (silicon dioxide) into the substrate of traditional bulk silicon, so as to achieve the effect of full dielectric isolation of the device. Because the SOI process can eliminate the parasitic latch-up effect of the bulk silicon CMOS circuit, and has strong resistance to single event and dose rate radiation, it has received more and more attention in the field of radiation resistance. SPICE (Simulation Program for Integrated CircuitEmphasis) is the most commonly used circuit-level simulation program in the device design industry. Various software manufacturers provide different versions of SPICE software ...

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Problems solved by technology

However, if Figure 1-2 As shown, we found that when the dose rate of radiation increases to a certain level, the peak current at the source terminal no longer increases proportionally, but a significant depression phenomenon appears, which cannot be explained by Honeywell's parasitic diode model of

In fact, this is mainly caused by the parasitic triode (BJT) in the device. When the high dose rate is irradiated, the microscopic potential changes in different regions inside the device cause the parasitic BJT to turn on, and the source starts to collect holes, so the source A negative current is superimposed on it, causing its peak current to sag

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