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Preparation Technology of n-Type In6se7 Based Thermoelectric Semiconductor

A technology of thermoelectric semiconductor and preparation process, which is applied in the direction of thermoelectric device node lead-out materials, etc., can solve the problems of low operating temperature and poor thermoelectric performance, and achieve the effects of low cost, reliable operation and long life

Inactive Publication Date: 2018-12-07
NINGBO UNIVERSITY OF TECHNOLOGY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] To overcome the intrinsic In 6 S 7 The deficiency of e thermoelectric semiconductor, the present invention aims to provide a kind of higher n-type In of performance to the art 6 Se 7 The preparation process of the base thermoelectric semiconductor enables it to solve the technical problems of poor thermoelectric performance and low service temperature of existing similar materials

Method used

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  • Preparation Technology of n-Type In6se7 Based Thermoelectric Semiconductor
  • Preparation Technology of n-Type In6se7 Based Thermoelectric Semiconductor

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0013] According to the chemical formula In 6 Se 7 The In and Se two-element particles with a purity greater than 99.999wt.% were weighed and mixed in a high-vacuum glove box, then placed directly in a quartz tube and sealed with paraffin wax, and quickly vacuum-packed after taking it out. It was then melted at 1100°C for 40 hours. After smelting and synthesis, it is quickly quenched in water when it is slowly cooled to 750°C in the furnace. The quenched ingot was pulverized and ball milled, and the ball milling time was controlled at 10 hours. The powder after ball milling was formed by discharge plasma spark sintering. The sintering temperature was 550 ° C, the sintering pressure was 60 MPa, and the sintering time was 40 minutes. In 6 Se 7 Binary thermoelectric semiconductor.

Embodiment 2

[0015] According to the chemical formula In 6 S 0.1 Se 6.9 Weigh the In, S, and Se three-element particles with a purity greater than 99.999wt.%, and mix them in a high-vacuum glove box, and then directly place them in a quartz tube and seal them with paraffin wax. After taking them out, they are quickly vacuum-packaged. It was then melted at 1100°C for 40 hours. After smelting and synthesis, it is quickly quenched in water when it is slowly cooled to 750°C in the furnace. The quenched ingot was pulverized and ball milled, and the ball milling time was controlled at 10 hours. The powder after ball milling was formed by discharge plasma spark sintering. The sintering temperature was 550 ° C, the sintering pressure was 60 MPa, and the sintering time was 40 minutes. In 6 S 0.1 Se 6.9 Ternary thermoelectric semiconductor.

Embodiment 3

[0017] According to the chemical formula In 6 S 0.3 Se 6.7 Weigh the In, S, and Se three-element particles with a purity greater than 99.999wt.%, and mix them in a high-vacuum glove box, and then directly place them in a quartz tube and seal them with paraffin wax. After taking them out, they are quickly vacuum-packaged. It was then melted at 1100°C for 40 hours. After smelting and synthesis, it is quickly quenched in water when it is slowly cooled to 750°C in the furnace. The quenched ingot was pulverized and ball milled, and the ball milling time was controlled at 10 hours. The powder after ball milling was formed by discharge plasma spark sintering. The sintering temperature was 550 ° C, the sintering pressure was 60 MPa, and the sintering time was 40 minutes. In 6 S 0.3 Se 6.7 Ternary thermoelectric materials.

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Abstract

The invention relates to a preparation process of an n-type In6Se7-based thermoelectric semiconductor. The key point of the design is to replace the Se element with an equimolar S element in an In6Se7 alloy to form a ternary thermoelectric semiconductor with a chemical formula of In6S0.5Se6.5; the preparation process It is: Weigh the corresponding amount of In, S and Se three elements according to the chemical formula, and vacuum melt at 1050-1150°C for 48 hours. The smelted ingot was pulverized and ball-milled, and the ball-milled powder was formed by discharge plasma spark sintering. The maximum sintering temperature was 550°C, the sintering pressure was 60Mpa, and the holding time was 40 minutes. The In6S0.5Se6.5 thermoelectric semiconductor was prepared. When the thermoelectric semiconductor is at 850K, Seebeck coefficient α=-220.11 (μV / K), electrical conductivity σ=9.91×103Ω-1.m-1, thermal conductivity κ=0.48 (W.K-1.m-1), the maximum Thermoelectric figure of merit ZT = 0.85. Material advantages: no pollution, no noise, can be applied to the production of medium and high temperature power generation components, has the advantages of reliable operation, long life, simple preparation process, etc.

Description

technical field [0001] The invention relates to the field of new materials, and is suitable for the key components of medium and high temperature power generation for direct conversion of heat energy and electric energy. It is an n-type In 6 Se 7 Fabrication process of thermoelectric semiconductors. Background technique [0002] Thermoelectric semiconductor material is a new type of semiconductor functional material that realizes direct mutual conversion of electric energy and thermal energy through the movement of carriers, including electrons or holes. Power generation and refrigeration devices made of thermoelectric materials have the advantages of small size, no pollution, no noise, no wear, good reliability, and long life. In the civilian field, the potential application range: household refrigerators, freezers, superconducting electronic device cooling and waste heat power generation, waste heat utilization power supply, and small power supply devices in remote areas...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B22F9/04B22F3/105H01L35/16H10N10/852
CPCB22F3/105B22F9/04B22F2009/043H10N10/852
Inventor 崔教林
Owner NINGBO UNIVERSITY OF TECHNOLOGY