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P-type wide bandgap oxide and zno combined vertical structure light-emitting device and preparation method thereof

A light-emitting device and vertical structure technology, applied in semiconductor devices, electrical components, circuits, etc., can solve the p-type doping difficulties of ZnO materials and other problems, achieve the solution of p-type doping difficulties, simple process, and expand the application range Effect

Inactive Publication Date: 2018-04-06
JINHUA JIDA PHOTOELECTRIC TECH RES INST CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The purpose of the present invention is to solve the difficult problem of p-type doping of ZnO materials, and to prepare a p-n junction light-emitting device by combining other p-type wide-bandgap oxide semiconductor materials and n-type ZnO. At the same time, in order to simplify the device preparation process and reduce costs, The substrate is made of n-type conductive Si single crystal material, and the device is fabricated into a vertical structure

Method used

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  • P-type wide bandgap oxide and zno combined vertical structure light-emitting device and preparation method thereof
  • P-type wide bandgap oxide and zno combined vertical structure light-emitting device and preparation method thereof
  • P-type wide bandgap oxide and zno combined vertical structure light-emitting device and preparation method thereof

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Embodiment 1

[0027] P-type wide bandgap oxide and ZnO combined vertical structure light-emitting device of p-type NiO thin film material. The structure of this light-emitting device is shown in the attached figure 1 , the preparation process is as follows, using the special growth MOCVD equipment and process for ZnO thin films described in the 02100436.6 and ZL200410011164.0 patents on an n-type conductive Si single wafer (which can be directly purchased, and its carrier concentration is 2 × 10 18 / cm 3 ) An undoped n-ZnO light-emitting layer 2 is grown on the substrate 1 with a thickness of 500 nm and a carrier concentration of 2 × 10 18 / cm 3 Then use the ZnO thin film special growth MOCVD equipment described in the 02100436.6 and ZL200410011164.0 patents to grow the undoped p-type NiO thin film material hole injection layer 3 on the n-ZnO light-emitting layer 2, and the organic nickel source for growth. It is methyl nickelocene (NiMCP2), the source bottle temperature is 50 °C, the gr...

Embodiment 2

[0029] P-type wide bandgap oxide and ZnO combined vertical structure light-emitting device of p-type CuO thin film material. The structure of this light-emitting device is shown in the attached figure 1 , the preparation process is as follows, using the MOCVD equipment and process for the growth of ZnO thin films described in the 02100436.6 and ZL200410011164.0 patents on the n-Si single wafer substrate 1 (the carrier concentration of which is 2 × 10 18 / cm 3 ) on the undoped n-ZnO light-emitting layer 2 with a thickness of 500 nm and a carrier concentration of 2 × 10 18 / cm 3 ; Then use the ZnO thin film special growth MOCVD equipment described in the 02100436.6 and ZL200410011164.0 patents to grow the undoped p-type CuO thin film material hole injection layer 3 on the n-ZnO light-emitting layer 2, and the organic copper source for growth. It is 2,2,6,6-tetramethyl-3,5-heptandione (TMHD) (Htmhd=2,2,6,6,-tetramethyl-3,5-heptandione), the source bottle temperature is 90℃ , ...

Embodiment 3

[0031] p-type Ga 2 O 3 Thin-film materials of p-type wide bandgap oxide and ZnO combined vertical structure light-emitting device. The structure of this light-emitting device is shown in the attached figure 1 , the preparation process is as follows, using the MOCVD equipment and process for the growth of ZnO thin films described in the 02100436.6 and ZL200410011164.0 patents on the n-Si single wafer substrate 1 (the carrier concentration of which is 2 × 10 18 / cm 3 ) on the undoped n-ZnO light-emitting layer 2 with a thickness of 500 nm and a carrier concentration of 2 × 10 18 / cm 3 ; and then use the p-type Ga 2 O 3 The preparation process is followed by the growth of magnesium-doped p-type Ga on the n-ZnO light-emitting layer 2 2 O 3 Thin film material hole injection layer 3, the doping source is MgO, the source bottle temperature is 25°C, the growth temperature is 600°C, the working gas is a mixed gas of argon and oxygen, the pressure of the reaction chamber is 120P...

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Abstract

The invention belongs to the semiconductor luminescent device and manufacturing technology field and relates to several kinds of p-type wide band gap oxide and ZnO combined vertical structure luminescent devices and a manufacturing method thereof. Each device is successively formed by a substrate, an n-ZnO luminescent layer epitaxially grown on the substrate, a hole injection layer prepared on the n-ZnO luminescent layer, an upper electrode prepared on the hole injection layer and a lower electrode prepared below the substrate. The device is characterized in that the substrate is an n-type conductive Si single crystal wafer; the hole injection layer is a p-type wide band gap oxide semiconductor films material; a thickness range is 200nm to 2000nm; and a concentration range of a carrier (a hole) is 2*10<17> to 5*10<19> / cm<3>. In the invention, a problem that ZnO material p type doping is difficult can be solved; simultaneously the device adopts a vertical structure and a technology is simple so that an application range of the device can be further expanded.

Description

technical field [0001] The invention belongs to the technical field of semiconductor light-emitting devices and their preparation, in particular to a ZnO-based material-based p-type wide bandgap oxide and ZnO combined vertical structure light-emitting device and a preparation method thereof. Background technique [0002] GaN-based materials have broader application prospects in the field of solid-state lighting. The energy band gap and lattice constant of ZnO and GaN are very close, and they have similar optoelectronic properties. However, compared with GaN, ZnO has higher melting point and exciton binding energy, higher exciton gain, low epitaxial growth temperature, low cost, and easy etching, which makes the subsequent processing of epitaxial wafers easier, making the device easier The preparation is more convenient and so on. Therefore, the successful development of ZnO-based light-emitting tubes, lasers and other light-emitting devices may replace or partially replace...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/14H01L33/28H01L33/00
CPCH01L33/0087H01L33/14H01L33/28
Inventor 杜国同夏晓川梁红伟董鑫包俊飞
Owner JINHUA JIDA PHOTOELECTRIC TECH RES INST CO LTD