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P-type wide band gap oxide and ZnO combined vertical structure luminescent device and manufacturing method thereof

A vertical structure, light-emitting device technology, applied in the direction of semiconductor devices, electrical components, circuits, etc., can solve the problem of p-type doping difficulties of ZnO materials, etc., to solve the problem of p-type doping difficulties, expand application scope, and simple process Effect

Inactive Publication Date: 2016-07-20
JINHUA JIDA PHOTOELECTRIC TECH RES INST CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The purpose of the present invention is to solve the difficult problem of p-type doping of ZnO materials, and to prepare a p-n junction light-emitting device by combining other p-type wide-bandgap oxide semiconductor materials and n-type ZnO. At the same time, in order to simplify the device preparation process and reduce costs, The substrate is made of n-type conductive Si single crystal material, and the device is fabricated into a vertical structure

Method used

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  • P-type wide band gap oxide and ZnO combined vertical structure luminescent device and manufacturing method thereof
  • P-type wide band gap oxide and ZnO combined vertical structure luminescent device and manufacturing method thereof
  • P-type wide band gap oxide and ZnO combined vertical structure luminescent device and manufacturing method thereof

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Embodiment 1

[0027] Combination of p-type NiO thin film materials with p-type wide bandgap oxide and ZnO vertical structure light-emitting device. The structure of this light-emitting device is shown in the attached figure 1 , the preparation process is to use the special MOCVD equipment and technology for the growth of ZnO thin films described in the 02100436.6 and ZL200410011164.0 patents on an n-type conductive Si single wafer (can be purchased directly, and its carrier concentration is 2×10 18 / cm 3 ) grow an undoped n-ZnO light-emitting layer 2 on the substrate 1 with a thickness of 500nm and a carrier concentration of 2×10 18 / cm 3 Then adopt the special growth MOCVD equipment for ZnO thin films described in 02100436.6 and ZL200410011164.0 patents to grow undoped p-type NiO thin film material hole injection layer 3 on the n-ZnO light-emitting layer 2, and the organic nickel source for growth It is methyl nickelocene (NiMCP2), the source bottle temperature is 50°С, the growth tempe...

Embodiment 2

[0029] Combination of p-type wide bandgap oxide of p-type CuO thin film material and ZnO vertical structure light-emitting device. The structure of this light-emitting device is shown in the attached figure 1 , and its preparation process is to use the ZnO thin film special growth MOCVD equipment and technology described in the 02100436.6 and ZL200410011164.0 patents on the n-Si single wafer substrate 1 (the carrier concentration of which is 2×10 18 / cm 3 ) grow undoped n-ZnO light-emitting layer 2 with a thickness of 500nm and a carrier concentration of 2×10 18 / cm 3 Then adopt the special growth MOCVD equipment for ZnO thin films described in 02100436.6 and ZL200410011164.0 patents to grow the undoped p-type CuO thin film material hole injection layer 3 on the n-ZnO light-emitting layer 2, and the organic copper source for growth 2,2,6,6-tetramethyl-3,5-heptandione (TMHD) (Htmhd=2,2,6,6,-tetramethyl-3,5-heptandione), the source bottle temperature is 90° С, the growth tem...

Embodiment 3

[0031] p-Ca 2 o 3 P-type wide bandgap oxide and ZnO combined vertical structure light-emitting device of thin film material. The structure of this light-emitting device is shown in the attached figure 1 , and its preparation process is to use the ZnO thin film special growth MOCVD equipment and technology described in the 02100436.6 and ZL200410011164.0 patents on the n-Si single wafer substrate 1 (the carrier concentration of which is 2×10 18 / cm 3 ) grow undoped n-ZnO light-emitting layer 2 with a thickness of 500nm and a carrier concentration of 2×10 18 / cm 3 ; Then use the p-type Ca described in the ZL201310414275.5 patent 2 o 3 The preparation process is to grow magnesium-doped p-type Ca on the n-ZnO light-emitting layer 2 2 o 3 Thin film material hole injection layer 3, the doping source is magnesocene, the source bottle temperature is 25°С, the growth temperature is 600°С, the working gas is argon and oxygen mixed gas, the reaction chamber pressure is 120Pa, and...

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Abstract

The invention belongs to the semiconductor luminescent device and manufacturing technology field and relates to several kinds of p-type wide band gap oxide and ZnO combined vertical structure luminescent devices and a manufacturing method thereof. Each device is successively formed by a substrate, an n-ZnO luminescent layer epitaxially grown on the substrate, a hole injection layer prepared on the n-ZnO luminescent layer, an upper electrode prepared on the hole injection layer and a lower electrode prepared below the substrate. The device is characterized in that the substrate is an n-type conductive Si single crystal wafer; the hole injection layer is a p-type wide band gap oxide semiconductor films material; a thickness range is 200nm to 2000nm; and a concentration range of a carrier (a hole) is 2*10<17> to 5*10<19> / cm<3>. In the invention, a problem that ZnO material p type doping is difficult can be solved; simultaneously the device adopts a vertical structure and a technology is simple so that an application range of the device can be further expanded.

Description

technical field [0001] The invention belongs to the technical field of semiconductor light-emitting devices and their preparation, and in particular relates to a ZnO-based material-based p-type wide bandgap oxide and ZnO combined vertical structure light-emitting device and a preparation method thereof. Background technique [0002] GaN-based materials have wider application prospects in the field of solid-state lighting. The energy band gap and lattice constant of ZnO and GaN are very close, and they have similar photoelectric properties. However, compared with GaN, ZnO has a higher melting point and exciton binding energy, higher exciton gain, lower epitaxial growth temperature, lower cost, and easy etching, which makes the subsequent processing of the epitaxial wafer easier and makes the device The preparation is more convenient and so on. Therefore, the successful development of ZnO-based light-emitting tubes, lasers and other light-emitting devices may replace or part...

Claims

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Application Information

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IPC IPC(8): H01L33/14H01L33/28H01L33/00
CPCH01L33/0087H01L33/14H01L33/28
Inventor 杜国同夏晓川梁红伟董鑫包俊飞
Owner JINHUA JIDA PHOTOELECTRIC TECH RES INST CO LTD