High-quality p-type gallium oxide nano columnar structure thin film and preparation method thereof
A columnar structure, gallium oxide technology, used in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problems of low quality and difficult p-type doping of materials, achieve low price, mature technology, and ease the lattice. The effect of mismatch and thermal mismatch
Active Publication Date: 2021-07-09
JILIN UNIV
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[0004] The purpose of the invention is to propose a high-quality p-type Ga 2 o 3 Nano columnar structure thin film and preparation method thereof, to solve Ga 2 o 3 Difficult and low-quality p-type doping of materials
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Embodiment 1
[0020] A. Pretreatment of the GaAs single crystal substrate 1: firstly, the GaAs single crystal substrate 1 is cleaned with toluene, acetone, and ethanol in sequence for 5 minutes in an ultrasonic state. Then place the cleaned GaAs single crystal substrate 1 in a hydrochloric acid solution with a mass fraction of 10% for 5 minutes, remove the surface oxide layer and rinse it with deionized water, and finally dry the substrate with high-purity nitrogen gas;
[0021] B. Before the growth, it is necessary to heat the GaAs single crystal substrate in a tube furnace in a vacuum environment. The heating temperature is 650°C, the time is 5min, and the reaction pressure is 10Pa, so that most of the As elemental substance on the GaAs surface is detached and formed In the Ga-rich state, Ga atoms cluster on the substrate surface to form tiny droplets.
[0022] C. High quality p-type Ga 2 o 3 The nano columnar structure thin film is formed by high temperature oxidation of the heated GaA...
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Abstract
The invention discloses a high-quality p-type gallium oxide nano columnar structure thin film and a preparation method thereof, and belongs to the technical field of semiconductor thin film material preparation. The high-quality p-type gallium oxide nano columnar structure thin film is composed of a gallium arsenide (GaAs) single crystal substrate and a p-type Ga2O3 nano columnar structure thin film in sequence. The method comprises the following steps: heating the GaAs single crystal substrate to form gallium liquid drops on the surface of the GaAs single crystal substrate; and then introducing oxygen to carry out continuous thermal oxidation on the gallium liquid drops, so that As substituted AsO formed by As in the substrate is combined with intrinsic defect Ga vacancy VGa in Ga2O3 to form an AsO-VGa complex structure as an effective acceptor doping source, thereby forming a stable p-type Ga2O3 film. In addition, the nanometer columnar structure formed during thermal oxidation can effectively relieve large lattice mismatch and thermal mismatch with the substrate, and the crystal quality of the thin film is improved. The method is simple in process and low in cost, the problem of p-type doping of the Ga2O3 material is solved, the film quality is high, and the method provides powerful support for development of Ga2O3-based devices.
Description
technical field [0001] The invention belongs to the technical field of semiconductor film material preparation, in particular to a high-quality p-type gallium oxide nano-columnar structure film and a preparation method thereof. Background technique [0002] Gallium oxide (Ga 2 o 3 ) is a wide bandgap semiconductor material, the most stable crystal phase is monoclinic β-Ga 2 o 3 structure. Ga 2 o 3 It has high transmittance in the ultraviolet region, high breakdown electric field strength (8MV / cm), good thermal and chemical stability. Its good semiconductor process compatibility and low cost make it more valuable than semiconductor materials such as SiC and GaN. Ga 2 o 3 Many properties make it have broad application prospects in optoelectronic devices, power electronics, gas sensing and other fields. [0003] Current Ga 2 o 3 The research progress of the base device is relatively slow, the main reason is that the Ga 2 o 3 There are great difficulties in the eff...
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IPC IPC(8): H01L21/02
CPCH01L21/02395H01L21/02565H01L21/0259H01L21/02601H01L21/02614
Inventor 董鑫陈威焦腾张源涛张宝林
Owner JILIN UNIV