Enhanced GaN HEMT device based on superlattice structure, and preparation method thereof
A superlattice, enhanced technology, used in semiconductor/solid-state device manufacturing, semiconductor devices, nanotechnology for materials and surface science, etc., can solve device damage, large gate leakage, low acceptor activation rate, etc. The problem is to avoid device damage and suppress gate leakage current.
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Embodiment 1
[0036] The enhanced GaN HEMT device based on the superlattice structure of the present embodiment 1, its structural schematic diagram is as follows figure 1 shown. Including: substrate 1, GaN channel layer 2, AlN barrier layer 3 in the superlattice structure layer, GaN potential well layer 4 in the superlattice structure layer, p-type GaN / AlN doped layer 5, MgO gate Insulation layer 6, source metal electrode 7, drain metal electrode 8, gate metal electrode 9, wherein:
[0037] The substrate 1, the GaN channel layer 2, and the GaN / AlN superlattice structure layer are sequentially stacked from bottom to top;
[0038] The GaN / AlN superlattice structure layer is composed of alternate periodic growth of AlN barrier layers 3 and GaN potential well layers 4 , wherein the AlN barrier layers 3 are located above the GaN channel layer 2 .
[0039] The p-type GaN / AlN doped layer 5 is located in the GaN / AlN superlattice structure layer below the gate metal electrode 9 region.
[0040] T...
Embodiment 2
[0052] The enhanced GaN HEMT device based on the superlattice structure of the present embodiment 2, its structural schematic diagram is as follows figure 1 shown. Including: substrate 1, GaN channel layer 2, AlN barrier layer 3 in the superlattice structure layer, GaN potential well layer 4 in the superlattice structure layer, p-type GaN / AlN doped layer 5, MgO gate Insulation layer 6, source metal electrode 7, drain metal electrode 8, gate metal electrode 9, wherein:
[0053] The substrate 1, the GaN channel layer 2, and the GaN / AlN superlattice structure layer are sequentially stacked from bottom to top;
[0054] The GaN / AlN superlattice structure layer is composed of alternate periodic growth of AlN barrier layers 3 and GaN potential well layers 4, wherein the AlN barrier layer 3 is located above the GaN channel layer 2;
[0055] The p-type GaN / AlN doped layer 5 is located in the GaN / AlN superlattice structure layer below the gate metal electrode 9 region;
[0056] The M...
Embodiment 3
[0068] The enhanced GaN HEMT device based on the superlattice structure of this embodiment has a structural schematic diagram as figure 1 shown. Including: substrate 1, GaN channel layer 2, AlN barrier layer 3 in the superlattice structure layer, GaN potential well layer 4 in the superlattice structure layer, p-type GaN / AlN doped layer 5, MgO gate Insulation layer 6, source metal electrode 7, drain metal electrode 8, gate metal electrode 9, wherein:
[0069] The substrate 1, the GaN channel layer 2, and the GaN / AlN superlattice structure layer are stacked sequentially from bottom to top.
[0070] The GaN / AlN superlattice structure layer is composed of alternate periodic growth of AlN barrier layers 3 and GaN potential well layers 4 , wherein the AlN barrier layers 3 are located above the GaN channel layer 2 .
[0071] The p-type GaN / AlN doped layer 5 is located in the GaN / AlN superlattice structure layer below the gate metal electrode 9 region.
[0072] The MgO gate insulat...
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Abstract
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