A high-quality p-type gallium oxide nano-columnar structure film and its preparation method
A columnar structure, gallium oxide technology, used in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problems of low quality and difficult p-type doping of materials, and achieve low price, mature technology, and easy integration. Effect
Active Publication Date: 2022-04-29
JILIN UNIV
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[0004] The purpose of the invention is to propose a high-quality p-type Ga 2 o 3 Nano columnar structure thin film and preparation method thereof, to solve Ga 2 o 3 Difficult and low-quality p-type doping of materials
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Embodiment 1
[0020] A. Pretreatment of the GaAs single crystal substrate 1: firstly, the GaAs single crystal substrate 1 is cleaned with toluene, acetone, and ethanol in sequence for 5 minutes in an ultrasonic state. Then place the cleaned GaAs single crystal substrate 1 in a hydrochloric acid solution with a mass fraction of 10% for 5 minutes, remove the surface oxide layer and rinse it with deionized water, and finally dry the substrate with high-purity nitrogen gas;
[0021] B. Before the growth, it is necessary to heat the GaAs single crystal substrate in a tube furnace in a vacuum environment. The heating temperature is 650°C, the time is 5min, and the reaction pressure is 10Pa, so that most of the As elemental substance on the GaAs surface is detached and formed In the Ga-rich state, Ga atoms cluster on the substrate surface to form tiny droplets.
[0022] C. High quality p-type Ga 2 o 3 The nano columnar structure thin film is formed by high temperature oxidation of the heated GaA...
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Abstract
A high-quality p-type gallium oxide nano-columnar structure thin film and a preparation method thereof belong to the technical field of semiconductor thin film material preparation. The gallium arsenide (GaAs) single crystal substrate, p-type Ga 2 o 3 The nano columnar structure film consists of two parts. First, the GaAs single crystal substrate is heated to form gallium droplets on the surface; then, oxygen gas is introduced to continuously thermally oxidize the gallium droplets, so that As formed by As in the substrate replaces As O with Ga 2 o 3 Intrinsic defect Ga vacancies in V Ga combined to form As O -V Ga The complex structure acts as an efficient acceptor doping source to form a stable p-type Ga 2 o 3 film. In addition, the nano-columnar structure formed during thermal oxidation can effectively alleviate the large lattice mismatch and thermal mismatch with the substrate, and improve the crystal quality of the film. The invention has simple process and low cost, and solves the problem of Ga 2 o 3 The problem of p-type doping of materials, and the film quality is high, this method is Ga 2 o 3 The development of base devices provides strong support.
Description
technical field [0001] The invention belongs to the technical field of semiconductor film material preparation, in particular to a high-quality p-type gallium oxide nano-columnar structure film and a preparation method thereof. Background technique [0002] Gallium oxide (Ga 2 o 3 ) is a wide bandgap semiconductor material, the most stable crystal phase is monoclinic β-Ga 2 o 3 structure. Ga 2 o 3 It has high transmittance in the ultraviolet region, high breakdown electric field strength (8MV / cm), good thermal and chemical stability. Its good semiconductor process compatibility and low cost make it more valuable than semiconductor materials such as SiC and GaN. Ga 2 o 3 Many properties make it have broad application prospects in optoelectronic devices, power electronics, gas sensing and other fields. [0003] Current Ga 2 o 3 The research progress of the base device is relatively slow, the main reason is that the Ga 2 o 3 There are great difficulties in the eff...
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IPC IPC(8): H01L21/02
CPCH01L21/02395H01L21/02565H01L21/0259H01L21/02601H01L21/02614
Inventor 董鑫陈威焦腾张源涛张宝林
Owner JILIN UNIV