P-type gallium oxide nanostructure film and preparation method thereof
A nanostructure and gallium oxide technology, which is applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve problems such as low quality and difficult p-type doping of materials, and achieve low price, mature technology, and ease of crystal lattice Effects of Mismatch and Thermal Mismatch
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Embodiment 1
[0020] A. Pretreatment of the GaSb single crystal substrate 1: First, the GaSb single crystal substrate 1 is cleaned in sequence with toluene, acetone, and ethanol for 5 minutes in an ultrasonic state. Then, the cleaned GaSb single crystal substrate 1 was placed in a hydrochloric acid solution with a mass fraction of 10% for 5 minutes, the surface oxide layer was removed and rinsed with deionized water, and finally the substrate was blown dry with high-purity nitrogen;
[0021] B. Before growth, the GaSb single crystal substrate needs to be heated by a tube furnace in a vacuum environment. The heating temperature is 500°C, the time is 5min, and the reaction pressure is 10Pa, so that most of the Sb element on the surface of GaSb is detached to form In the Ga-rich state, Ga atoms cluster on the surface of the substrate to form tiny droplets.
[0022] C. p-type Ga 2 O 3 The nanostructured film is formed by the high temperature oxidation of the heated GaSb single crystal substra...
Embodiment 2
[0028] A. Pretreatment of the GaSb single crystal substrate 1: First, the GaSb single crystal substrate 1 is cleaned in sequence with toluene, acetone, and ethanol for 5 minutes in an ultrasonic state. Then, the cleaned GaSb single crystal substrate 1 was placed in a hydrochloric acid solution with a mass fraction of 10% for 5 minutes, the surface oxide layer was removed and rinsed with deionized water, and finally the substrate was blown dry with high-purity nitrogen;
[0029] B. Before growth, the GaSb single crystal substrate needs to be heated by a tube furnace in a vacuum environment. The heating temperature is 470°C, the time is 4min, and the reaction pressure is 20Pa, so that most of the Sb element on the surface of GaSb is detached, forming In the Ga-rich state, Ga atoms cluster on the surface of the substrate to form tiny droplets.
[0030] C. p-type Ga 2 O 3 The nanostructured film is formed by the high temperature oxidation of the heated GaSb single crystal substr...
Embodiment 3
[0035] A. Pretreatment of the GaSb single crystal substrate 1: First, the GaSb single crystal substrate 1 is cleaned in sequence with toluene, acetone, and ethanol for 5 minutes in an ultrasonic state. Then, the cleaned GaSb single crystal substrate 1 was placed in a hydrochloric acid solution with a mass fraction of 10% for 5 minutes, the surface oxide layer was removed and rinsed with deionized water, and finally the substrate was blown dry with high-purity nitrogen;
[0036] B. Before the growth, the GaSb single crystal substrate needs to be heated by a tube furnace in a vacuum environment. The heating temperature is 520°C, the time is 6min, and the reaction pressure is 7Pa, so that most of the Sb element on the surface of GaSb is detached and formed In the Ga-rich state, Ga atoms cluster on the surface of the substrate to form tiny droplets.
[0037] C. p-type Ga 2 O 3 The nanostructured film is formed by the high temperature oxidation of the heated GaSb single crystal s...
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Abstract
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