InP heterojunction bipolar transistor circuit based on collector control switch
A heterojunction bipolar, control switch technology, applied in the direction of electrical digital data processing, special data processing applications, instruments, etc., can solve the problems of limited application range, increase chip area, increase the complexity of HBT preparation process, etc., to achieve Improved self-heating effect and wide application range
Inactive Publication Date: 2016-07-27
XIDIAN UNIV
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However, most of these methods will increase the complexity of the HBT preparation process, greatly increase the chip area or have limitations in the scope of application.
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[0021] In order to make the above objects, features and advantages of the present invention more obvious and comprehensible, the specific implementation modes and effects of the present invention will be described in detail below in conjunction with the accompanying drawings.
[0022] see figure 1 , the present invention includes: a power unit module 1 and a current compensation module 2; the current compensation module 2 is connected to the input end of the power unit module 1 for controlling the input current of the power unit module 1; wherein, the power unit module 1 is made of indium phosphide The first heterojunction bipolar transistor Q1 is composed; the current compensation module 2 is composed of an indium phosphide second heterojunction bipolar transistor Q2 and a resistor R.
[0023] The base of the first indium phosphide heterojunction bipolar transistor Q1 is connected to the input terminal IN, the collector is connected to the output terminal OUT, and the emitter...
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The present invention discloses an InP heterojunction bipolar transistor circuit based on a collector control switch. The InP heterojunction bipolar transistor circuit comprises a power unit module (1) and a current compensation module (2). The current compensation module is connected to an input end of the power unit module, so as to control an input current of the power unit module; the power unit module consists of a first Indium Phosphide heterojunction bipolar transistor Q1, and current compensation module consists of a second Indium Phosphide heterojunction bipolar transistor Q2 and a resistance R; and a base of Q2 is connected to a base of Q1, an emitter of Q2 is connected to a collector of Q1, and the resistance R is used as a collector control switch and connected between a collector of Q2 and the ground. According to the InP heterojunction bipolar transistor circuit based on the collector control switch, which is disclosed by the present invention, the self-heating effect of the InP heterojunction bipolar transistor is compensated at the cost of quite a few chip area according to a negative feedback compensation principle, so that direct current operating points are stabilized, linearity of transistor outputting is improved, and the circuit can be used for guiding direct current bias design of radio-frequency and microwave circuits.
Description
technical field [0001] The invention belongs to the field of circuit design, in particular to an InP heterojunction bipolar transistor circuit based on a collector control switch, which can improve the self-heating effect of the InP heterojunction bipolar transistor, and is used to guide the DC bias of radio frequency and microwave circuits design. Background technique [0002] The indium phosphide heterojunction bipolar transistor InPHBT has ultra-high frequency characteristics, high power density and good linearity, and is widely used in microwave, millimeter wave and higher frequency circuits. However, the high power density of InPHBT easily leads to the continuous increase of the operating temperature of devices and circuits. The increased device junction temperature will directly affect the electrical performance of the device, aggravate the self-heating effect, cause the device to fail, and affect the reliability of the circuit. Therefore, improving the self-heating ...
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IPC IPC(8): G06F17/50
CPCG06F30/367G06F2119/08
Inventor 吕红亮朱莉武岳张义门张玉明
Owner XIDIAN UNIV