Crystalline silicon PERC cell alkali polishing method not influencing front surface

A positive surface and battery technology, applied in the direction of circuits, photovoltaic power generation, electrical components, etc., can solve the problems of alkali hanging on the polished surface, uneven polishing surface, and affecting the short-wave response of the battery, so as to reduce the recombination center, increase the spectral response, Effect of improving photoelectric conversion efficiency

Inactive Publication Date: 2016-08-10
JINENG CLEAN ENERGY TECH LTD
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AI Technical Summary

Problems solved by technology

However, under the process of first texturizing and then polishing, the alkali hanging on the polishing surface is more serious, resulting in uneven polishing surface; and in the process of polishing and mask removal, it will have a certain impact on the front side, affecting the response of the battery in the short-wave band

Method used

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Embodiment Construction

[0017] 1. In the embodiment of the present invention, the PERC battery is prepared by polishing first and then texturing.

[0018] The steps are as follows: take 800pcs of original single crystal silicon wafers, place the original silicon wafers in a polishing solution with a mass ratio of KOH of 10% and a temperature of 83°C for double-sided polishing. The polishing time is 160s. After polishing, 0.65g of weight is removed from both sides. The reflectance of the polished surface is 41%; the polished silicon wafer is plated with a 110nm SiNx film by PECVD as a mask; then the coated silicon wafer is soaked in HF for 100s to completely remove the front-side winding SiNx film; Ratio of 1.5%, temperature of 80 ℃ for texturing in the texturing tank, the texturing time is 1100s, the single-sided weight removal after texturing is 0.32g, and the reflectivity is 9%; then, according to the conventional PERC battery preparation method After completing the subsequent low-pressure diffusio...

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Abstract

The invention belongs to the manufacturing technology of a photovoltaic solar cell and relates to a crystalline silicon PERC cell alkali polishing method not influencing the front surface. The method comprises the following steps: a) enabling an original silicon wafer to react for 160-180 s in a polishing solution, of which the KOH mass ratio is 10-20%, and the temperature is 78-83 DEG C, for polishing; b) plating a 100-120 nm SiNx film, serving as a mask, on the polished silicon wafer through PECVD; c) enabling the plated silicon wafer to be soaked in HF for 80-100s to remove the SiNx film plated on the front surface thoroughly; d) texturing the plate-removed silicon wafer in a texturing tank, of which the KOH mass ratio is 1.5-3%, and the temperature is 80-82 DEG C, the texturing time being 1100-1300 s; and e) finishing the follow-up steps by the textured silicon wafer according to a conventional PERC cell preparation method. The method can obtain a relatively-uniform polished surface, and meanwhile, can prevent causing influence on the front surface, thereby improving cell performance.

Description

technical field [0001] The invention belongs to the manufacturing technology of photovoltaic solar cells, and relates to an alkali polishing method for crystalline silicon PERC cells that does not affect the front surface. Background technique [0002] Solar photovoltaic power generation has great application prospects. The current development trend of the photovoltaic industry is to improve efficiency and reduce costs. However, the efficiency of conventional structural batteries has no room for improvement. High-efficiency crystalline silicon batteries have become the mainstream of market research and development. For various P-type high-efficiency batteries, only the back passivation technology can maximize the performance of the battery on the basis of equal cost. Products with this technology have high efficiency, high opening voltage, low packaging loss, and better low-light response. They are strategic products to seize the mainstream market. [0003] PERC battery bac...

Claims

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Application Information

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IPC IPC(8): H01L31/18
CPCH01L31/18H01L31/186Y02E10/50Y02P70/50
Inventor 张娟李高非王继磊付少剑黄金白炎辉
Owner JINENG CLEAN ENERGY TECH LTD
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