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Solid-state thin film integrated circuit capacitor having self-repairing effect and fabrication method thereof

An integrated circuit, self-healing technology, applied in the direction of thin film/thick film capacitors, fixed capacitors, fixed capacitor electrodes, etc., can solve the problems of increased energy storage density, low film dielectric constant, etc., to improve service life and low cost of raw materials , The effect of easy mass production

Inactive Publication Date: 2016-08-17
TONGJI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Unlike Al electrolytic capacitors, there is no liquid electrolyte in this capacitor, but active Al with dielectric effect 2 o 3 As the provider of oxygen in anodic oxidation, the thin film avoids the problems caused by the presence of electrolyte, but Al 2 o 3 The dielectric constant of the thin film is low, thus limiting the further improvement of its energy storage density

Method used

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  • Solid-state thin film integrated circuit capacitor having self-repairing effect and fabrication method thereof
  • Solid-state thin film integrated circuit capacitor having self-repairing effect and fabrication method thereof
  • Solid-state thin film integrated circuit capacitor having self-repairing effect and fabrication method thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0049] like figure 1 Shown is a cross-sectional schematic diagram and a schematic circuit diagram of a capacitor unit without electrochemical treatment in the present invention. The capacitor unit includes a silicon wafer 1 (substrate substrate), a lower electrode 2, an active strontium titanate thin film 3 and an Al thin film 4. like figure 2 As shown, it is a schematic cross-sectional view of a capacitor unit after electrochemical treatment in the present invention, and the capacitor unit includes a silicon wafer 1, a lower electrode 2, an active strontium titanate film 3, an Al film 4 and an anode Al 2 o 3 Film 5, the active strontium titanate thin film 3 is arranged between the lower electrode 2 and the Al thin film 4, and the interface between the active strontium titanate thin film 3 and the Al thin film 4 is a layer of anode Al with self-repairing function formed by electrochemical treatment 2 o 3 Film 5. In the process of defect elimination and repair, a voltage g...

Embodiment 2

[0058] In this example, the heat treatment conditions after each coating of the strontium titanate film are 200°C for 5 minutes, 350°C for 5 minutes, 500°C for 5 minutes, 350°C for 5 minutes, and 200°C for 5 minutes to obtain a certain thickness of strontium titanate The thin film was annealed at 450° C. for 3 hours with oxygen, and the conditions of other experimental procedures were the same as those in Example 1.

Embodiment 3

[0060] In this example, the heat treatment conditions after coating the strontium titanate film each time are 200°C for 5 minutes, 500°C for 5 minutes, and 200°C for 5 minutes. After obtaining a certain thickness of strontium titanate film, annealing with oxygen at 500°C for 3 hours , and all the other experimental procedure conditions are the same as in Example 1.

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Abstract

The invention relates to a solid-state thin film integrated circuit capacitor having a self-repairing effect. The capacitor comprises a substrate, a lower electrode and an upper electrode, wherein the lower electrode coats the substrate, the capacitor also comprises an active strontium titanate thin film, the active strontium titanate thin film is arranged between the upper electrode and the lower electrode, the upper electrode is an Al thin film, and a layer of anodic oxide film having a self-repairing effect is arranged between the active strontium titanate thin film and the upper electrode. Compared with the prior art, the capacitor has the advantages of high energy storage density, no exist of an electrolyte and the like, and can be self-repaired.

Description

technical field [0001] The invention belongs to the technical field of capacitor preparation, and relates to a defect self-repair technology of a solid film capacitor with high energy storage density, in particular to a solid film integrated circuit capacitor with self-repair function and a preparation method thereof. Background technique [0002] Microelectronics technology marked by integrated circuits is ubiquitous, has become the foundation of the information society, and has also made important contributions to the development of social economy. High integration, low power consumption, high performance, high reliability, and miniaturization are the development directions of microelectronics technology. As an essential and important part of integrated circuits, capacitors are enough to attract attention. During the preparation and use of capacitors, various defects will inevitably appear in the dielectric. Therefore, it is necessary to realize the self-healing of the de...

Claims

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Application Information

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IPC IPC(8): H01G4/33H01G4/015H01G4/12
CPCH01G4/015H01G4/1227H01G4/33
Inventor 姚曼文李菲陈建文彭勇苏振徐开恩姚熹
Owner TONGJI UNIV
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