Method for detecting GaN-based HEMT degradation through current fitting

Abstract

The invention discloses a method for detecting GaN-based HEMT degradation through current fitting. The method comprises the steps: firstly making a circular Schottky diode structure facilitating the analysis of gate leakage current characteristics, applying a continuous reverse stress to the circular Schottky diode structure, and measuring the curves of temperature dependent on current-voltage before and after stress; secondly employing extrapolation to determine the saturation tunneling current value and tunneling parameter value of a device under the absolute zero temperature before and after stress through the fitting of forwarding tunneling currents under different temperatures according to the relation between the saturation tunneling current and tunneling parameter and the temperature; finally calculating the change, caused by stress, of the defect density of a barrier layer, and achieving the detection of the GaN-based HEMT degradation. The simple method is employed for achieving the detection of the change, caused by the stress, of the defect density of the barrier layer, and facilitates the analysis of the degradation mechanism and process of a GaN-based HEMT device.

Description

technical field [0001] The invention relates to the technical field of GaN-based HEMT reliability analysis, in particular to a method for detecting GaN-based HEMT degradation through current fitting. Background technique [0002] Compared with traditional narrow-bandgap semiconductors, wide-bandgap GaN semiconductors have superior physical properties such as high breakdown electric field, high electron saturation velocity, and high thermal stability. Especially the AlGaN / GaN or InAlN / GaN heterojunction with strong polarization effect can induce a high concentration of two-dimensional electron gas at the heterointerface, which is the core structure of HEMT. However, when the GaN-based HEMT works in the high reverse gate bias mode, the leakage current of the device will continue to increase with the voltage application time. The increased leakage current will increase the power loss of the device, so this degradation seriously hinders its large-scale commercial application. ...

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Problems solved by technology

However, this method can only obtain the barrier layer dislocation density of epitaxial wafers that have not been fabricated into devices or devices that have been etched, and cannot directly test the manufactured devices, and the test is relatively complicated, and the test results are not accurate and cannot Determining the effects of stress on devices

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