Method for testing of laser-simulation radiation dose rate effects of silicon-based semiconductor transistor

Abstract

The invention relates to a method for testing of laser-simulation radiation dose rate effects of a silicon-based semiconductor transistor. The method comprises the steps that (1) at least three silicon-based semiconductor transistors with the same batch and the same model are selected and processed by a pre-treatment of unsealing, and are then taken as to-be-tested semiconductor transistors; (2) the to-be-tested semiconductor transistors are tested, and normal functions of the transistors are guaranteed; (3) a testing circuit board is welded, and the to-be-tested semiconductor transistors are connected to a testing circuit; (4) a laser beam is irradiated to chips of the to-be-tested transistors; (5) and energy of the laser beam is regulated, and responses of the to-be-tested transistors are tested and then recorded by an oscilloscope. The invention provides a method which can be used for the laser-simulation testing of the radiation dose rate effects of the semiconductor transistor under laboratory conditions. The method has the advantages that a period for anti-radiation reinforcement design is shortened effectively; experimental cost is reduced; an effective method is provided for research of the radiation dose rate effects of a silicon-based semiconductor device; and experimental devices and experimental method are highly valuable for generalization.

Description

technical field [0001] The invention belongs to the research field of radiation effects of semiconductor devices, and mainly relates to a laser simulation test method of the radiation dose rate of silicon-based semiconductor transistors, which can be used in the test of laser simulation of the radiation dose rate of semiconductor devices. Background technique [0002] The instantaneous dose rate radiation effect of semiconductor devices refers to the ionizing radiation damage exhibited by semiconductor devices exposed to instantaneous pulsed γ-ray radiation. The mechanism is that the instantaneous ionizing pulse radiation excites electron-hole pairs in semiconductor materials. These photogenerated carriers will generate instantaneous photocurrent during the process of being collected by the device. When the radiation dose rate increases to a certain extent, the photocurrent may be equal to or even greater than the current signal of the circuit itself, resulting in degradatio...

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Problems solved by technology

However, this type of radiation simulation device has certain limitations, such as limited radiation measurement range, difficult parameter adjustment, radiation damage during the test, large electromagnetic interference, low signal-to-noise ratio, long use reservation cycle, and high price. Applied in the research of radiation effect of laboratory semiconductor devices

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