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A duv LED epitaxial wafer structure

An epitaxial wafer, multiple quantum well technology, applied in electrical components, circuits, semiconductor devices, etc., can solve problems such as limited effect, and achieve the effect of improving luminous efficiency

Active Publication Date: 2018-07-17
TAIYUAN UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, traditional patterned substrates, surface roughening, anti-reflection layers, high-reflective mirrors and other technologies have limited effect on improving the light extraction efficiency of deep ultraviolet LEDs.

Method used

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  • A duv LED epitaxial wafer structure
  • A duv LED epitaxial wafer structure

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0015] A structure of a DUV LED epitaxial wafer. The structure of the epitaxial wafer includes a substrate and an AlN buffer layer, an n-AlGaN layer, a multiple quantum well light-emitting layer, a p-AlGaN layer, and a p-AlGaN layer on the substrate from bottom to top. -GaN contact layer; the multiple quantum well light-emitting layer is composed of a pair of well layers and barrier layers stacked alternately from bottom to top, and the well layer is Al 1-x In x N / Al z In y Ga 1-y-z N / Al 1-x In x N, where x=0.1, y=z=0, the barrier layer is AlN; the Al in the well layer z In y Ga 1-y-z The thickness of the N layer is 0.3nm, two layers of Al 1-x In x The total thickness of the N layer is 5 nm, and the thickness of the barrier layer is 20 nm.

Embodiment 2

[0017] A structure of a DUV LED epitaxial wafer. The structure of the epitaxial wafer includes a substrate and a buffer layer composed of an AlN layer and an AlGaN / GaN superlattice from bottom to top on the substrate, an n-AlGaN layer, and multiple quantum Well light-emitting layer, p-AlGaN layer and p-GaN contact layer; the multiple quantum well light-emitting layer is composed of 10 pairs of well layers and barrier layers stacked alternately from bottom to top, and the well layer is Al 1-x In x N / Al z In y Ga 1-y-z N / Al 1-x In x N, where x=0.1, y=z=0.05, the barrier layer is AlN; the Al in the well layer z In y Ga 1-y-z The thickness of the N layer is 1nm, two layers of Al 1-x In x The total thickness of the N layer is 3 nm, and the thickness of the barrier layer is 10 nm.

Embodiment 3

[0019] A structure of a DUV LED epitaxial wafer. The structure of the epitaxial wafer includes a substrate and an AlN buffer layer, an n-AlGaN layer, a multiple quantum well light-emitting layer, a p-AlGaN layer, and a p-AlGaN layer on the substrate from bottom to top. -GaN contact layer; the multiple quantum well light-emitting layer is composed of 20 pairs of well layers and barrier layers stacked alternately from bottom to top, and the well layer is Al 1-x In x N / Al z In y Ga 1-y-z N / Al 1-x In x N, where x=0.05, y=0.1, z=0, the barrier layer is AlN; the Al in the well layer z In y Ga 1-y-z The thickness of the N layer is 2nm, two layers of Al 1-x In x The total thickness of the N layer is 5 nm, and the thickness of the barrier layer is 8 nm.

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Abstract

The invention belongs to the field of an optoelectronic device, in particular relates to a deep ultra violet (DUV) light-emitting diode (LED) epitaxial wafer structure. The DUV LED epitaxial wafer structure comprises a substrate, wherein a buffer layer, an n-AlGaN layer, a multi-quantum well luminous layer, a p-AlGaN layer and a p-GaN contact layer are sequentially arranged on the upper surface of the substrate from bottom to top, the multi-quantum well luminous layer is formed by sequentially and alternatively laminating a plurality of pairs of well layers and barrier layers from bottom to top, and each well layer is Al<1-x>In<x>N / Al<z>In<y>Ga<1-y-z>N / Al<1-x>In<x>N. With the adoption of a structure that an Al<z>In<y>Ga<1-y-z>N thin layer is inserted to the Al<1-x>In<x>N well layers with low In constituent, the relative positions of a heavy hole belt, a light hole belt and a crystal field split hole belt are controlled, the proportion of TE-mode light is increased while the proportion of TM-mode light is reduced, and thus, the luminous efficiency of a DUV LED is improved.

Description

Technical field [0001] The invention belongs to the field of optoelectronic devices, in particular to a DUV LED epitaxial wafer structure. Background technique [0002] Ultraviolet light-emitting diodes (LED) have the advantages of environmental protection, non-toxicity, low power consumption, small size and long life, and meet the requirements of environmental protection and energy saving in the new era. The emission wavelength of AlGaN-based LEDs can cover the range of 210nm-360nm, of which 210nm-300nm belongs to the deep ultraviolet band. Deep UV LEDs have great application value in printing, medical treatment, purification, investigation, data storage, and lighting. [0003] Compared with GaN-based blue LEDs, the luminous efficiency of deep ultraviolet LEDs with wavelengths shorter than 300nm is generally lower. As the light-emitting wavelength of AlGaN-based LEDs gradually becomes shorter, the Al composition in the light-emitting layer AlGaN will increase accordingly, and th...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/06H01L33/32
CPCH01L33/06H01L33/32
Inventor 卢太平朱亚丹赵广洲许并社
Owner TAIYUAN UNIV OF TECH