Sintered oxide and semiconductor device

Abstract

Provided are: a sintered oxide comprising indium, tungsten, and at least one of zinc and tin, and comprising, as a crystal phase, a double oxide crystal phase including tungsten, and at least one of zinc and tin; and a semiconductor device (10) comprising an oxide semiconductor film (14) formed by a sputtering method using the sintered oxide as a target.

Description

technical field [0001] The present invention relates to an oxide sintered body suitable for use as a target for forming an oxide semiconductor film by a sputtering method, and a semiconductor device including an oxide semiconductor film formed by using the oxide sintered body. Background technique [0002] In liquid crystal display devices, thin film EL (Electro Luminescence) display devices, organic EL display devices, etc., amorphous silicon films have conventionally been mainly used as semiconductor films for channel layers of TFTs (Thin Film Transistors) which are semiconductor devices. [0003] However, in recent years, attention has been focused on an oxide semiconductor film mainly composed of In-Ga-Zn-based composite oxide (hereinafter also referred to as "IGZO") as the above-mentioned semiconductor film because it is different from amorphous The oxide semiconductor film has higher carrier mobility than a silicon film. [0004] For example, Japanese Patent Publicati...

AI Technical Summary

Problems solved by technology

[0012] A TFT as a semiconductor device as disclosed in Japanese Patent Publication No. 2004-091265 (Patent Document 2) has the problem that the off-state current is high, that is, close to 1×10 -11 A, therefore the ratio of ON current to OFF current cannot be sufficiently increased unless the driving voltage is increased to approximately 70 V, the semiconductor device including an oxide sintered body mainly made of indium and including tungsten by using an oxide sintered body as a channel layer Manufactured oxide semiconductor film

Images