Cleaning method and back-side defect reworking method for large-size sapphire substrate before annealing

A sapphire, large-scale technology, applied in the cleaning method using tools, cleaning methods using liquid, cleaning methods and utensils, etc., can solve problems such as bad rework, yield rate below 50%, unclean surface cleaning, etc.

Inactive Publication Date: 2016-08-31
SHANGHAI ADVANCED SILICON TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] Aiming at the existing technical problems, the present invention provides a method for cleaning large-size sapphire substrates before annealing and reworking bad backsides. Black spots, white spots) are serious, and the yield rate is lower than 50% after annealing

Method used

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  • Cleaning method and back-side defect reworking method for large-size sapphire substrate before annealing
  • Cleaning method and back-side defect reworking method for large-size sapphire substrate before annealing
  • Cleaning method and back-side defect reworking method for large-size sapphire substrate before annealing

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Experimental program
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Effect test

Embodiment 1

[0033] After the 25 ground sapphire substrates were rinsed with electronic-grade pure water, after 10 minutes of ultrasonic cleaning in two ultrasonic water tanks containing detergent at 80°C, use a long-haired brush to stick an appropriate amount of detergent to the substrates. After scrubbing, scrub with coarse throwing cloth, and then use ultrasonic cleaning for 10 minutes in overflow mode. Finally, dry the substrate and inspect it visually under strong light. The test results show that 24 pieces are qualified, 1 piece has a color difference, and the yield rate reaches 96%.

Embodiment 2

[0037] After the 25 ground sapphire substrates were rinsed with electronic-grade pure water, they were cleaned in two 80°C ultrasonic water tanks containing detergent for 10 minutes; Substrates are manually scrubbed and then scrubbed with coarse throwing cloth; (3) use overflow ultrasonic cleaning for 10 minutes; (4) electronic grade pure water at 80°C for 10 minutes, and then put into pure water overflow ultrasonic tank 5 minutes, the water temperature is room temperature; (5) use H 2 SO 4 and H 2 o 2 The ratio of the 100°C mixed solution is 2:1:7, corrode the wafer for 5 minutes, and then overflow with pure water for 3 minutes; (6) use NH 4 OH and H 2 o 2 The ratio of the mixed solution is 1:1:7, and the wafer is etched for 5 minutes; (7) The wafer is sprayed with electronic-grade pure water for 3 minutes, then heated and dried, and put into an annealing furnace; 1 black dot, 1 small collapse. The yield rate reached 92%.

Embodiment 3

[0041]Take 25 pieces of bad reworked sheets on the back, place the back side up on the 103 substrate sheet placement position shown in Figure 1, take 30ml of the slurry with abrasive SiC:suspending agent:pure water=500:400:1500ml and spread evenly on the After grinding the substrate on the device for 15 minutes with a cast iron grinding disc, stick a coarse throw cloth on the grinding disc and grind for 5 minutes, then wash the ground 25 sapphire substrates with electronic grade pure water, and pass through two Do not turn on ultrasonic cleaning for 10 minutes in an ultrasonic water tank containing cleaning agent at 80°C. Use a long-haired brush to stick an appropriate amount of detergent to the substrate and scrub it manually, then scrub it with a coarse throw, use an overflow method for ultrasonic cleaning for 10 minutes, and then put it in electronic-grade pure water at 80°C for 10 minutes, then put it in pure water In the overflow ultrasonic tank for 5 minutes, the water t...

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Abstract

The invention provides a cleaning method and back-side defect reworking method for a large-size sapphire substrate before annealing. The cleaning method for the large-size sapphire substrate before annealing is characterized in that a ground sheet is cleaned in a chemical tank and then manually brushed and scrubbed so that the surface granularity and cleanliness of the sapphire substrate can be effectively improved; and finally, acid-base soaking, drenching and spin-drying are conducted, the surface cleanliness of the annealed substrate reaches the standard that black and white points, color differences, fingerprints and stains are avoided, and the yield of the substrate can reach 90% or over. The invention further provides the back-side defect reworking method. By the adoption of the back-side defect reworking method, the problem that the roughness of the back side is inconsistent due to pure manual polishing can be solved. The cleaning method and back-side defect reworking method for the large-size sapphire substrate before annealing have the characteristics that dust on the surface of the sapphire substrate can be effectively reduced or removed, back-side defects of the substrate are greatly reduced, and the yield of finished products is greatly increased.

Description

technical field [0001] The invention relates to a method for cleaning a large-size sapphire substrate sheet before annealing and reworking a bad sheet on the back, and belongs to the technical field of crystal material processing. Background technique [0002] With the continuous improvement of the light-emitting performance requirements of gallium nitride (GaN)-based light-emitting diodes (LEDs) in the field of optoelectronics, sapphire (α-Al) grown GaN by metal organic chemical vapor deposition (MOCVD) 2 o 3 ) The surface quality requirements of the substrate wafer are becoming more and more stringent, mainly because the impurity contamination on the polished surface of the sapphire substrate wafer will seriously affect the quality and yield of the LED. In the current LED production, more than 50% of the waste products of large-size sapphire substrates are caused by surface pollution. In the production of substrate wafers, almost every process has cleaning problems, so th...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B08B1/00B08B3/08B08B3/12B08B3/02B08B3/04B24B1/00
CPCB08B1/00B08B3/02B08B3/048B08B3/08B08B3/12B24B1/00
Inventor 毛智斌沈思情刘浦锋宋洪伟陈猛
Owner SHANGHAI ADVANCED SILICON TECH CO LTD
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