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Method for cutting large-size silicon carbide bodies in mortar

A silicon carbide body and large-size technology, applied in the direction of fine working devices, working accessories, stone processing equipment, etc., can solve the problems of waste, large loss of single crystal materials, and low cutting efficiency, and achieve less crystal loss and cutting efficiency Improve the effect of high cutting efficiency

Active Publication Date: 2016-09-07
BEIJING CENTURY GOLDRAY SEMICON CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The larger the diamond particles on the busbar, the higher the cutting efficiency, but it will cause too much waste in the cutting process. On the contrary, the smaller the diamond particles, the lower the cutting efficiency, and the smaller the waste of the silicon carbide body; to cut 500 Micron silicon carbide wafers as an example, the realistic and feasible method is to control the particle size of diamond particles to 15-50 microns, but the loss of single crystal material is still very large

Method used

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  • Method for cutting large-size silicon carbide bodies in mortar
  • Method for cutting large-size silicon carbide bodies in mortar
  • Method for cutting large-size silicon carbide bodies in mortar

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0020] Utilize the method for cutting large-scale silicon carbide body with mortar of the present invention to cut 6 inches of silicon carbide single crystal crystals, the cutting wire diameter used is 0.16mm, the diamond granularity D50=5 micron that selects in the cutting mortar, the cutting mortar viscosity controls about 0.45dpa .s, the diamond content in the mortar is 15%, the cutting time is 200H, that is, the comprehensive cutting speed is 0.75m / H, the cutting line speed is 0.4m / min; the cutting running speed is 500m / s, the maximum swing angle is 2 degrees, and the applied line tension is 40N , the thickness of the crystal is 10mm, and the thickness of the cutting piece is 500±15 microns.

[0021] Theoretically, 15.03 pieces were produced, and 15 pieces were actually produced.

[0022] Cutting effect description:

[0023] 1) Surface quality: After cutting, there is no obvious saw pattern on the surface, and it can be processed in the next process to meet the grinding r...

Embodiment 2

[0029] Utilize the method of mortar cutting large-scale silicon carbide body of the present invention to cut 6 inches of silicon carbide single crystal crystals, the cutting wire diameter used is 0.16mm, the frequency of ultrasonic wave generation equipment is set to 40KHz, the diamond particle size D50= that selects in the cutting mortar 5 microns, the viscosity of the cutting mortar is controlled at about 0.46dpa.s, the diamond content in the mortar is 15%, the cutting time is 180H, that is, the comprehensive cutting speed is 0.83m / H, the cutting line speed is 0.4m / min; the cutting speed is 500m / s, The maximum swing angle is 2 degrees, the applied line tension is 40 Newtons, the crystal thickness is 10.5mm, and the cutting piece thickness is 500±10 microns.

[0030] Theoretically, 15.78 pieces were produced, and 16 pieces were actually produced.

[0031] Cutting effect description:

[0032] 1) Cutting efficiency: Relatively without ultrasonic assistance, the cutting efficie...

Embodiment 3

[0039] Utilize the method for cutting large-size silicon carbide bodies with mortar of the present invention to cut 6-inch silicon carbide single crystal crystals, the used cutting wire diameter is 0.16mm, the frequency of ultrasonic generating equipment is set to 40KHz, and the diamond particle size D50=5 is selected in the cutting mortar Micron, the viscosity of the cutting mortar is controlled at about 0.45dpa.s, the diamond content in the mortar is 20%, the cutting time is 150H, that is, the comprehensive cutting speed is 1m / H, the cutting line speed is 0.4m / min; the cutting speed is 500m / s, and the maximum swing Angle 2 degrees, applied line tension: 40 Newtons, crystal thickness 9.5mm, cutting slice thickness 500±10 microns.

[0040] Theoretically, 14.3 pieces were produced, and 15 pieces were actually produced.

[0041] Cutting effect description:

[0042] 1) Cutting efficiency: Relatively without ultrasonic assistance, the cutting efficiency is increased by 25%;

[0...

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Abstract

The invention discloses a method for cutting large-size silicon carbide bodies in mortar. The method comprises the steps that 1) diamond particles of which the particle size is 2 to 8 microns and a cooling liquid are mixed into mortar, wherein the weight of the diamond particles accounts for 3 to 50% of the total weight of the mortar, and the viscosity of the mortar is 0.1 to 0.6 dpa.s; and 2) the mortar is poured into a pool, silicon carbide single crystal of which the diameter is 6 inches or above is immersed into the mortar, and a cutting device equipped with a cutting line is used for cutting the silicon carbide single crystal. According to the method, the silicon carbide single crystal is cut in the mortar pool where diamond particles are mixed through utilizing the cutting line, the particle size of the diamond particles in the mortar is smaller, the crystal consumption is lower, and the cutting efficiency is higher.

Description

technical field [0001] The invention relates to the technical field of semiconductor material preparation, in particular to a method for cutting large-sized silicon carbide bodies with mortar. Background technique [0002] Silicon carbide single crystal substrates are widely used in the fields of power electronics and optoelectronics. At present, industrial silicon carbide single crystal substrate suppliers such as American CREE, Dow Corning, European Sicrystal, and Japan's Nippon Steel Corporation all use physical vapor transport deposition technology (PVT) for silicon carbide single crystal growth. PVT technology has characteristics such as long growth cycle, low growth efficiency, and short single crystal length (10-20mm / root). Therefore, the cost per unit length of silicon carbide single crystal material is high, which restricts its industrialization development progress. At present, the silicon carbide single crystal substrate industry is improving the crystal output p...

Claims

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Application Information

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IPC IPC(8): B28D5/04B28D7/00
CPCB28D5/045B28D5/047B28D7/00
Inventor 王锡铭
Owner BEIJING CENTURY GOLDRAY SEMICON CO LTD