Local DNA hairpin strand displacement reaction-based XOR gate and complementing circuit

A technology of chain displacement reaction and inversion circuit, which is applied in CAD circuit design, electrical digital data processing, special data processing applications, etc. It can solve the problems of slow molecular diffusion and wrong molecular collision, and achieve fast construction speed and good performance. , the effect of improving the accuracy

Inactive Publication Date: 2016-09-07
ZHENGZHOU UNIVERSITY OF LIGHT INDUSTRY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, due to the slow molecular diffusion and wrong molecular collisions in the global DNA strand displacement reaction, more and more researchers have begun to focus on the application of localized molecular strand displacement in the construction of molecular circuits.

Method used

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  • Local DNA hairpin strand displacement reaction-based XOR gate and complementing circuit
  • Local DNA hairpin strand displacement reaction-based XOR gate and complementing circuit
  • Local DNA hairpin strand displacement reaction-based XOR gate and complementing circuit

Examples

Experimental program
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Effect test

Embodiment 1

[0030] like figure 2As shown, the XOR gate based on the local DNA hairpin strand displacement reaction provided by the present invention is constructed by dual-track logic, including single-stranded DNA input, fuel hairpin and DNA hairpin fixed on the origami substrate;

[0031] The single-stranded DNA input has four: 0 >, 0 >, 0 >, 0 >

[0032] There are two kinds of DNA fuel cards: [s*]{x^> (that is, F(y, x) in the figure), [s*]{F^> (that is, in F(z, F);

[0033] There are seven types of DNA hairpins fixed on the origami substrate: {tether() a 0 ^*}[s]{y^> (that is, H in the figure (a 0 , y), {tether() x^*}[s]{blank^> (that is, H(x, -) in the figure, {tether() b 0 ^*}[s]{y^> (that is, H in the figure (b 0 , y), {tether() x^*}[s]{z^> (that is, H(x, z) in the figure, {tether() c 0 ^*}[s]{y^> (that is, H in the figure (c 0 , y), {tether() d 0 ^*}[s]{y^> (that is, H(d in the figure 0 , y), {tether() F^*}[s]{i^> (that is, H(F, i) in the figure, where tether() means that...

Embodiment 2

[0289] like image 3 As shown, the negation circuit constructed based on the local DNA hairpin displacement reaction XOR gate described in Example 1 belongs to a three-bit binary input negation circuit, which is composed of two parallel XOR gates;

[0290] In this circuit: input x 3 Represents the sign bit of the input binary number, it only has two logic states of "0" and "1", and "0" means that the input binary number is positive, "1" means that the input binary number is negative; input x 4 and x 5 Represent the high and low bits of the binary input value respectively, and also only have two logic states of "0" and "1"; output y 1 and y 2 Respectively represent the high and low bits of the binary output value, and also only have two logic states of "0" and "1";

[0291] The truth table for this negation circuit is as follows:

[0292] .

[0293] It can be seen from the truth table of the negation circuit that when the sign bit x of the binary number is input 3 When...

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Abstract

The invention belongs to the technical field of molecular circuit-based design and particularly relates to a DNA strand self-assembly principle-based and local DNA hairpin strand displacement reaction-based XOR gate and a complementing circuit constructed by utilizing the same. The XOR gate is constructed by adopting double-rail logic and comprises a single-stranded DNA input, a fuel hairpin and a DNA hairpin fixed to a fold paper substrate. The complementing circuit belongs to a three binary input complementing circuit and is composed of two parallel XOR gates. According to the provided XOR gate, the occurrence probability of wrong strand displacement reactions is relatively low and the DNA strand displacement reaction efficiency is improved. According to the provided complementing circuit, parallel computing can be realized without mutual interference; and a simulation result for Visual DSD of the complementing circuit shows that the complementing circuit is reasonable to construct, has good performance and has the advantages of high construction speed, high precision, high expandability and the like in construction of a large complex molecular system.

Description

technical field [0001] The invention belongs to the technical field of molecular circuit design, and in particular relates to an exclusive OR gate based on a DNA chain self-assembly principle based on a local DNA hairpin strand replacement reaction and a negation circuit constructed by using the exclusive OR gate. Background technique [0002] As a branch of natural computing, a large number of multifunctional molecular computing devices have been constructed based on biological materials in biological computing. Based on the natural characteristics of DNA, such as spontaneous pairing assembly and automatic strand replacement, it is an ideal material for molecular computing, and it can provide great potential for the construction of more DNA molecular circuits. However, due to the slow molecular diffusion and wrong molecular collisions in the global DNA strand displacement reaction, more and more researchers have begun to focus on the application of local molecular strand di...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G06F17/50
CPCG06F30/36
Inventor 王延峰刘海燕黄春张勋才孙军伟王子成姜素霞殷婧崔光照张雯雯
Owner ZHENGZHOU UNIVERSITY OF LIGHT INDUSTRY
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