Method for preparing silicon oxide/gold microsphere with surface enhanced Raman scattering effect and application thereof

A technology for surface-enhanced Raman and scattering effects, applied in the fields of material science and analytical chemistry, can solve the problems of inability to large-scale and continuous production, complicated preparation process, low production efficiency, etc., and achieve low price of instruments and equipment, and simple and easy-to-obtain raw materials. , the effect of high production efficiency

Active Publication Date: 2016-09-28
EAST CHINA NORMAL UNIV
View PDF4 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] There are many methods for preparing surface-enhanced Raman substrates, such as optical exposure technology, nanoimprinting technology, template method, etc., but all of them have disadvantages such as complicated preparation process, high cost, low production efficiency, and incapability of large-scale and continuous production.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for preparing silicon oxide/gold microsphere with surface enhanced Raman scattering effect and application thereof
  • Method for preparing silicon oxide/gold microsphere with surface enhanced Raman scattering effect and application thereof
  • Method for preparing silicon oxide/gold microsphere with surface enhanced Raman scattering effect and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0042] Tetraethyl Tetrasilicate, Chlorauric Acid, Surfactant Pluronic @ P123, hydrochloric acid, ethanol, and deionized water were mixed at a molar ratio of 1:0.03:0.0096:0.004:22:5 to form a precursor solution. After the above mixed solution is atomized, it is carried by nitrogen gas into a high-temperature tube furnace at a temperature of 400 degrees, and after a pyrolysis reaction, a silicon oxide / gold composite is obtained, wherein the particle size of gold nanoparticles is 5-30nm. After calcining the microspheres at 400°C for 4 hours, silicon oxide / gold microspheres with a layered mesoporous structure were obtained. figure 1 TEM image of the product.

Embodiment 2

[0044] Tetraethyl Tetrasilicate, Chlorauric Acid, Surfactant Pluronic @ Mix F127, hydrochloric acid, ethanol, and deionized water at a molar ratio of 1:0.03:0.0047:0.004:22:5 to form a precursor solution. After the above mixed solution is atomized, it is carried by nitrogen gas into a high-temperature tube furnace at a temperature of 450 degrees, and after a pyrolysis reaction, a silicon oxide / gold composite is obtained, wherein the particle size of gold nanoparticles is 5-30nm. After calcining the microspheres at 450°C / 4 hours, silicon oxide / gold microspheres with a hexagonal stacked mesoporous structure are obtained, such as figure 2 Shown is a TEM image of silica / gold microspheres.

Embodiment 3

[0046] Synthetic steps are as above-mentioned embodiment one, difference is that the ratio of each reactant is tetraethyl orthotetrasilicate, chloroauric acid, surfactant Pluronic @ P123, hydrochloric acid, ethanol, and deionized water were mixed at a molar ratio of 1:0.01:0.19:0.004:22:8 to form a precursor solution. image 3 TEM image of the product.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
particle diameteraaaaaaaaaa
particle diameteraaaaaaaaaa
mesoporeaaaaaaaaaa
Login to view more

Abstract

The invention discloses a method for preparing silicon oxide / gold microsphere with surface enhanced Raman scattering effect. The method comprises the following steps: 1) a silicon and gold-containing precursor is dissolved in an ethanol solution, a clean and transparent mixing solution is formed, the solution is atomized and introduced into a high-temperature tubular furnace for a pyrolytic reaction to generate microsphere; and 2) the microsphere is calcined to obtain a silicon oxide / gold compound with a mesoporous structure. The silicon oxide / gold microsphere is prepared by employing a spray pyrolysis method with one step, the method has the advantages of fast and simple operation, high efficiency, and continuous large-scale production; The invention also provides the silicon oxide / gold microsphere and an application of the silicon oxide / gold microsphere as a surface enhanced Raman substrate.

Description

technical field [0001] The invention relates to the technical fields of material science and analytical chemistry, in particular to a method for preparing silicon oxide / gold microspheres with a surface-enhanced Raman scattering effect. Background technique [0002] Surface-enhanced Raman scattering effect (SERS) has received extensive attention since its discovery. Surface-enhanced Raman, as an effective analytical detection tool, is widely used in trace and even single-molecule detection. Raman signal can be enhanced by 10 when molecules are detected on rough metal surface or nano-sol (such as gold, silver, copper) substrate surface 4 -10 10 It is characterized in that there is no special requirement for sample preparation during analysis and testing, no direct contact with the sample is required, and there is no pollution or damage to the sample. An important prerequisite for obtaining surface-enhanced Raman scattering signals with high signal-to-noise ratio is to prepar...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): G01N21/65
CPCG01N21/658
Inventor 陈丽珍李丽满天天任磊齐林唐倩
Owner EAST CHINA NORMAL UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products