Ligbt device with super-barrier collector structure and its manufacturing method
A collector and super-barrier technology, applied in the field of power semiconductor devices, can solve the problems of increased device conduction loss, high collector doping concentration, long tail current time, etc., to reduce switching loss, speed up the extraction process, Manufacturing process is fully compatible with the effect
Active Publication Date: 2020-05-22
UNIV OF ELECTRONICS SCI & TECH OF CHINA
View PDF4 Cites 0 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
[0004] The doping concentration of the collector of traditional LIGBT devices is relatively high, resulting in the accumulation of a large number of minority carriers near the PN junction of the collector in the on-state, where the excess carriers disappear through recombination, resulting in Long tailing current time, relatively large turn-off loss
At present, the method of reducing the collector injection efficiency is mainly used to reduce the turn-off loss, but the problem is that the conduction loss of the device increases
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment Construction
[0031] The technical solution of the present invention will be described in detail below in conjunction with the accompanying drawings:
[0032] The LIGBT device with a super barrier collector structure of the present invention, such as figure 2 As shown, it includes a P-type substrate 1, a buried oxide layer 2, and an N-type drift region 3 stacked in sequence from bottom to top; one end of the upper layer of the N-type drift region 3 has a P-type body region 4 and an upper layer of the N-type drift region 3. The other end has a collector P-type body region 12; the upper layer of the P-type body region 4 has a P+ emitter region 5 and an N+ emitter region 6, and the N+ emitter region 6 is located on the side close to the collector P-type body region 12; The upper surface of the N-type drift region 3 between the P-type body region 4 and the collector P-type body region 12 has a field oxide layer 11, and the lower portion of the field oxide layer 11 extends into the N-type drift regi...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
| Property | Measurement | Unit |
|---|---|---|
| thickness | aaaaa | aaaaa |
| thickness | aaaaa | aaaaa |
Login to View More
Abstract
The invention belongs to the technical field of power semiconductor devices, and relates to a LIGBT device with a super-barrier collector structure and a manufacturing method thereof. The collector structure of the device of the present invention uses the MOS channel to reduce the barrier height by utilizing the body effect of the MOS, and creates a "super barrier" for electrons, that is, the collector structure barrier MOS is higher than the PN junction barrier on the back of the traditional IGBT. The voltage is low, so the IGBT of the present invention can be turned on at a voltage less than 0.7V, and the structure also has a conductance modulation effect, which reduces the forward voltage drop when the IGBT is turned on; when it is turned off, the collector is in the open state The MOS channel accelerates the extraction process of excess carriers near the emitter and reduces the switching loss of the device; at the same time, the device of the present invention does not require additional process steps and is fully compatible with the existing integrated circuit manufacturing process.
Description
Technical field [0001] The invention belongs to the technical field of power semiconductor devices, and relates to a LIGBT device with a super-barrier collector structure and a manufacturing method thereof. Background technique [0002] Lateral Insulated Gate Bipolar Transistor (LIGBT) has the advantages of voltage control, fast switching speed, high input impedance and small on-state voltage drop, and the lateral structure IGBT (LateralIGBT, LIGBT), compared with the vertical structure It is easier to integrate in silicon-based, especially SOI (Silicon On Insulator)-based power integrated circuits, and is a typical core device in Smart Power Integrated Circuit (SPIC). In recent years, with the rapid development of SOI-based SPIC, its advantages such as high speed, high integration, high stability, anti-irradiation and good isolation have made SOI-LIGBTs more and more respected and concerned. However, the trade-off relationship between the conduction voltage drop and the switchi...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/08H01L29/739H01L21/331
CPCH01L29/0821H01L29/66325H01L29/7393
Inventor 张金平史建东陈钱刘永其他发明人请求不公开姓名
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA