Semiconductor heterostructure, and preparation method and applications thereof

A heterogeneous structure and semiconductor technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve problems that affect the quality of AlInN crystals and device performance, uneven material composition, fluctuations in In composition, etc., to achieve Achieve high-quality epitaxial growth, improve immiscibility, and eliminate reliability problems

A heterogeneous structure and semiconductor technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve problems that affect the quality of AlInN crystals and device performance, uneven material composition, fluctuations in In composition, etc., to achieve Achieve high-quality epitaxial growth, improve immiscibility, and eliminate reliability problems

CN105990106AActive Publication Date: 2016-10-05SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
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  • Semiconductor heterostructure, and preparation method and applications thereof
  • Semiconductor heterostructure, and preparation method and applications thereof
  • Semiconductor heterostructure, and preparation method and applications thereof

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0053] Embodiment 1 The Al contained in the device of this embodiment x In y Ga 1-x-y The N / GaN heterojunction can be fabricated as follows, where Al x In y Ga 1-x-y The specific composition of N is: aluminum component x=33%, indium component y=7%, gallium component 1-x-y=60%.

[0054] I. Non-pulse growth mode

[0055] (1) GaN channel layer growth (assuming that the epitaxial growth of the nucleation layer, stress control layer, and buffer layer has been completed). The carrier gas is hydrogen, and the growth temperature is relatively high, 900-1200°C; the pressure of the reaction chamber is relatively high, 100-350mbar. The thickness of the GaN channel layer is more than 20nm, and the growth rate is 0.1-3μm / hr.

[0056] (2) Adjust the conditions of the reaction chamber to the growth conditions of the AlInGaN barrier layer. In the environment where ammonia (nitrogen source) is not turned off, the carrier gas is switched from hydrogen to nitrogen (or contains a small am...

Embodiment 2

[0063] Embodiment 2 The Al contained in the device of this embodiment x In y Ga 1-x-y The N / GaN heterojunction can be fabricated as follows, where Al x In y Ga 1-x-y The specific composition of N is: aluminum component x=66.01%, indium component y=13.99%, gallium component 1-x-y=20%

[0064]I. Non-pulse growth mode

[0065] (1) GaN channel layer growth (assuming that the epitaxial growth of the nucleation layer, stress control layer, and buffer layer has been completed). The carrier gas is hydrogen, and the growth temperature is relatively high, 900-1200°C; the pressure of the reaction chamber is relatively high, 100-350mbar. The thickness of the GaN channel layer is more than 20nm, and the growth rate is 0.1-3μm / hr.

[0066] (2) Adjust the conditions of the reaction chamber to the growth conditions of the AlInGaN barrier layer. In the environment where ammonia (nitrogen source) is not turned off, the carrier gas is switched from hydrogen to nitrogen (or contains a sma...

Embodiment 3

[0073] Embodiment 3 The Al contained in the device of this embodiment x In y Ga 1-x-y The N / GaN heterojunction can be fabricated as follows, where Al x In y Ga 1-x-y The specific composition of N is: aluminum component x=33.44%, indium component y=6.56%, gallium component 1-x-y=60%.

[0074] I. Non-pulse growth mode

[0075] (1) GaN channel layer growth (assuming that the epitaxial growth of the nucleation layer, stress control layer, and buffer layer has been completed). The carrier gas is hydrogen, and the growth temperature is relatively high, 900-1200°C; the pressure of the reaction chamber is relatively high, 100-350mbar. The thickness of the GaN channel layer is more than 20nm, and the growth rate is 0.1-3μm / hr.

[0076] (2) Adjust the conditions of the reaction chamber to the growth conditions of the AlInGaN barrier layer. In the environment where ammonia (nitrogen source) is not turned off, the carrier gas is switched from hydrogen to nitrogen (or contains a sm...

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Abstract

The invention discloses a semiconductor heterostructure, and a preparation method and applications thereof. The semiconductor heterostructure comprises a first semiconductor material and a second semiconductor material. The first semiconductor material and the second semiconductor material are mutually joined to form virtual lattice matching. The first semiconductor material is AlxInyGa1-x-yN, wherein 4.72< / =x / y< / =5.10, 0< / =x< / =1 and 0<y<1. The second semiconductor material is GaN. Preferably, 0.2<(1-x-y)< / =0.6. The preparation method comprises steps: after a GaN layer is formed through growth, an AlxInyGa1-x-yN layer is formed in a mode of introducing an aluminum source, an indium source, a gallium source and a nitrogen source in a reaction chamber of epitaxial growth equipment in a simultaneous and / or pulse means. By using the semiconductor heterostructure of the invention, the production process of a semiconductor device can be effectively simplified, the reliability of the semiconductor device is optimized, and particularly, the reliability problem of devices such as an HEMT due to stress can be eliminated fundamentally, and more ideal spontaneous polarization strength between the barrier layer and the GaN layer can be kept.

Description

technical field [0001] The invention particularly relates to a semiconductor heterostructure, its preparation method and application, and belongs to the field of semiconductor material science. Background technique [0002] In the past two decades, with the in-depth research on III-V nitride semiconductor material systems, various nitride semiconductor electronic devices and photonic devices have developed rapidly. Among them, the heterojunction-based high electron mobility transistor (High Electron Mobility Transistor, HEMT) has broad application prospects in power systems, wireless communications and other fields. [0003] Currently, high electron mobility transistors are generally based on AlGaN / GaN heterojunctions. In this structure, the Al composition in the AlGaN barrier layer is kept at about 0.20 (such as figure 1 ), so the coherent growth is on the GaN channel layer, thereby generating the piezoelectric polarization effect, and finally through the spontaneous pola...

Claims

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Application Information

Patent Timeline
05 Oct 2016
Publication
CN105990106A
IPC
H01L21/205; H01L29/778
Inventors
周宇; 李水明