Heterojunction silicon solar cell and manufacturing method thereof

Abstract

The invention relates to a heterojunction silicon crystal solar cell and a fabrication method thereof. The fabrication method includes the following steps that: a silicon semiconductor substrate is provided; a first mask and a second mask are formed on a first transparent conductive layer on the first surface of the silicon semiconductor substrate and a second transparent conductive layer on the second surface of the silicon semiconductor substrate respectively; the first transparent conductive layer and the second transparent conductive layer at the side wall surface of the silicon semiconductor substrate are removed through an etching gas; a first amorphous semiconductor layer, a second amorphous semiconductor layer, a first buffer layer and a second buffer layer at the side wall surface of the silicon semiconductor substrate are removed through an etching agent; and at least one electrode is formed on the first transparent conductive layer on the first surface and the second transparent conductive layer on the second surface, so that the heterojunction silicon crystal solar cell can be fabricated.

Description

technical field [0001] The invention relates to a heterojunction silicon crystal solar cell and a manufacturing method thereof, in particular to a heterojunction of an amorphous semiconductor layer, an intrinsic amorphous silicon semiconductor layer, and a transparent conductive layer etched away from the side wall surface of a silicon crystal semiconductor substrate. Mass junction silicon solar cell and its manufacturing method. Background technique [0002] see figure 1 , figure 1 A schematic cross-sectional view showing a prior art heterojunction crystalline silicon solar cell. Such as figure 1 As shown, a heterojunction silicon solar cell PA100 includes a solar cell body PA1 , a transparent conductive layer PA2 , a first electrode PA3 and a second electrode PA4 . The solar cell body PA1 includes a silicon semiconductor substrate PA11, a first intrinsic amorphous semiconductor layer PA12, a first amorphous semiconductor layer PA13, a second intrinsic amorphous semicon...

AI Technical Summary

Problems solved by technology

[0005] The existing method of cutting the transparent conductive layer PA2 and the silicon semiconductor substrate PA11 entirely by laser cutting to insulate the side walls will reduce the effective area of ​​the solar cell and reduce the photocurrent generated as a whole. In addition, the first amorphous semiconductor Layer PA13 will also cause thermal cracking or damage due to high laser energy, reducing the passivation effect of amorphous semiconductors

However, by controlling the laser energy to remove the transparent conductive layer PA2, generally there will still be a residual transparent conductive layer PA2, causing some leakage current to flow, resulting in occasional short circuits, which cannot be completely avoided. Leakage will damage the passivation layer at the same time to reduce Voc, destroy the structure of the surface anti-reflection layer to reduce Jsc, and the pn junction (pnjunction) on the side wall will have a large recombination current, which will reduce the pseudo fill factor (Pseudo Fill Factor, PFF ), directly affects the fill factor (Fill Factor, FF), and the method of laser removal of the transparent conductive layer is physical removal, which may still damage the silicon semiconductor substrate and cause fragmentation

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